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WSP4606

Public Made by Adom

by adom

Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs Publish 0.1.0 · Ray 24d ago
viewers wsp4606: viewers · Ray 24d ago
package.json Publish 0.1.0 · Ray 24d ago
page.json wsp4606: specified limits as data (metadata.characteristics, 60 rows from the datasheet) · Ray 17d ago
README.md wsp4606: specified limits as data (metadata.characteristics, 60 rows from the datasheet) · Ray 17d ago
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wsp4606-etched.step wsp4606: factory component page (tier=lcsc) · Ray 24d ago
wsp4606-hero.glb wsp4606: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
wsp4606-hero.overlay.json Publish 0.1.0 · Ray 24d ago
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WSP4606

Winsok Semicon · MOSFETs · SOP-8

WSP4606 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (Q1), rated VDS 30V and ID 7A.
2 G1 input Gate of the N-channel MOSFET (Q1), with VGS limit of ±20V.
3 S2 passive Source of the P-channel MOSFET (Q2), rated VDS -30V and ID -6A.
4 G2 input Gate of the P-channel MOSFET (Q2), with VGS limit of ±20V.
5 D2 passive Drain of the P-channel MOSFET (Q2), rated VDS -30V, pulsed drain current -12A; pins 5 and 6 are both D2.
6 D2 passive Drain of the P-channel MOSFET (Q2), rated VDS -30V, pulsed drain current -12A; pins 5 and 6 are both D2.
7 D1 passive Drain of the N-channel MOSFET (Q1), rated VDS 30V, pulsed drain current 20A; pins 7 and 8 are both D1.
8 D1 passive Drain of the N-channel MOSFET (Q1), rated VDS 30V, pulsed drain current 20A; pins 7 and 8 are both D1.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-ch) VDS 30 V 1
Drain-Source Voltage (P-ch) VDS -30 V 1
Gate-Source Voltage (N-ch) VGS -20 20 V 1
Gate-Source Voltage (P-ch) VGS -20 20 V 1
Continuous Drain Current (N-ch) ID@TC=25℃ 7 A VGS @ 10V 1
Continuous Drain Current (P-ch) ID@TC=25℃ -6 A VGS @ 10V 1
Continuous Drain Current at TC=100℃ (N-ch) ID@TC=100℃ 6 A VGS @ 10V 1
Continuous Drain Current at TC=100℃ (P-ch) ID@TC=100℃ -4 A VGS @ 10V 1
Pulsed Drain Current (N-ch) IDM 20 A 1
Pulsed Drain Current (P-ch) IDM -12 A 1
Single Pulse Avalanche Energy (N-ch) EAS 72 mJ Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=10A 1
Single Pulse Avalanche Energy (P-ch) EAS 59 mJ Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-10A 1
Avalanche Current (N-ch) IAS 21 A 1
Avalanche Current (P-ch) IAS -19 A 1
Total Power Dissipation (N-ch) PD@TC=25℃ 2.5 W 1
Total Power Dissipation (P-ch) PD@TC=25℃ 2.08 W 1
Storage Temperature Range (N-ch) TSTG -55 150 ℃ 1
Storage Temperature Range (P-ch) TSTG -55 150 ℃ 1
Operating Junction Temperature Range (N-ch) TJ -55 150 ℃ 1
Operating Junction Temperature Range (P-ch) TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 85 ℃/W Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Thermal Resistance Junction-Case RθJC 50 ℃/W Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec 1
Drain-Source Breakdown Voltage (N-ch) BVDSS 30 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance (N-ch) RDS(ON) 18 28 mΩ VGS=10V, ID=6A 2
Static Drain-Source On-Resistance (N-ch) RDS(ON) 25 32 mΩ VGS=4.5V, ID=5A 2
Gate Threshold Voltage (N-ch) VGS(th) 1 1.5 2.5 V 2
Drain-Source Leakage Current at TJ=25℃ (N-ch) IDSS 1 uA VDS=30V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current at TJ=55℃ (N-ch) IDSS 5 uA VDS=30V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current (N-ch) IGSS -100 100 nA VGS=±20V, VDS=0V 2
Single Pulse Avalanche Energy (N-ch, guaranteed) EAS 16 mJ VDD=25V, L=0.1mH, IAS=10A 2
Continuous Source Current (N-ch) IS 7 A 2
Pulsed Source Current (N-ch) ISM 20 A VG=VD=0V, Force Current 2
Diode Forward Voltage (N-ch) VSD 1.2 V VGS=0V, IS=5A, TJ=25℃ 2
Drain-Source Breakdown Voltage (P-ch) BVDSS -30 V VGS=0V, ID=-250uA 3
Static Drain-Source On-Resistance (P-ch) RDS(ON) 30 38 mΩ VGS=-10V, ID=-6A 3
Static Drain-Source On-Resistance (P-ch) RDS(ON) 48 58 mΩ VGS=-4.5V, ID=-3A 3
Gate Threshold Voltage (P-ch) VGS(th) -1 -1.5 -2.5 V 3
Drain-Source Leakage Current at TJ=25℃ (P-ch) IDSS 1 uA VDS=-24V, VGS=0V, TJ=25℃ 3
Drain-Source Leakage Current at TJ=55℃ (P-ch) IDSS 5 uA VDS=-24V, VGS=0V, TJ=55℃ 3
Gate-Source Leakage Current (P-ch) IGSS -100 100 nA VGS=±20V, VDS=0V 3
Single Pulse Avalanche Energy (P-ch, guaranteed) EAS 16 mJ VDD=-25V, L=0.1mH, IAS=-10A 3
Continuous Source Current (P-ch) IS -6 A 3
Pulsed Source Current (P-ch) ISM -12 A VG=VD=0V, Force Current 3
Diode Forward Voltage (P-ch) VSD -1.2 V VGS=0V, IS=-6A, TJ=25℃ 3
BVDSS Temperature Coefficient (N-ch) △BVDSS/△TJ 0.034 V/℃ Reference to 25℃, ID=1mA 2
VGS(th) Temperature Coefficient (N-ch) △VGS(th) -5.8 mV/℃ VGS=VDS, ID=250uA 2
Forward Transconductance (N-ch) gfs 10 S VDS=15V, ID=5A 2
Gate Resistance (N-ch) Rg 2.5 Ω VDS=24V, VGS=0V, f=1MHz 2
Total Gate Charge (4.5V) (N-ch) Qg 7.2 nC VDS=20V, VGS=4.5V, ID=6A 2
Gate-Source Charge (N-ch) Qgs 1.4 nC VDS=20V, VGS=4.5V, ID=6A 2
Gate-Drain Charge (N-ch) Qgd 2.2 nC VDS=20V, VGS=4.5V, ID=6A 2
Input Capacitance (N-ch) Ciss 550 pF VDS=25V, VGS=0V, f=1MHz 2
Output Capacitance (N-ch) Coss 68 pF VDS=25V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance (N-ch) Crss 55 pF VDS=25V, VGS=0V, f=1MHz 2
BVDSS Temperature Coefficient (P-ch) △BVDSS/△TJ -0.085 V/℃ Reference to 25℃, ID=-1mA 3
VGS(th) Temperature Coefficient (P-ch) △VGS(th) 0.375 mV/℃ VGS=VDS, ID=-250uA 3
Forward Transconductance (P-ch) gfs 6 S VDS=-10V, ID=-6A 3
Total Gate Charge (-4.5V) (P-ch) Qg 6.4 nC VDS=-20V, VGS=-4.5V, ID=-6A 3
Input Capacitance (P-ch) Ciss 645 pF VDS=-25V, VGS=0V, f=1MHz 3
Reverse Transfer Capacitance (P-ch) Crss 105 pF VDS=-25V, VGS=0V, f=1MHz 3

CAD (KiCad official)

  • Symbol: WSP4606
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp4606-etched.step / wsp4606-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp4606.step / wsp4606.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (8 pp, sha256 5e88037c1fac0b17, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF