component
WSP4606
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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wsp4606: specified limits as data (metadata.characteristics, 60 rows from the datasheet)
2 files changed
+795−1
README.md+67@@ -26,6 +26,73 @@ WSP4606 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted f | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage (N-ch) | VDS | | | 30 | V | | 1 |+| Drain-Source Voltage (P-ch) | VDS | -30 | | | V | | 1 |+| Gate-Source Voltage (N-ch) | VGS | -20 | | 20 | V | | 1 |+| Gate-Source Voltage (P-ch) | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (N-ch) | ID@TC=25℃ | | | 7 | A | VGS @ 10V | 1 |+| Continuous Drain Current (P-ch) | ID@TC=25℃ | -6 | | | A | VGS @ 10V | 1 |+| Continuous Drain Current at TC=100℃ (N-ch) | ID@TC=100℃ | | | 6 | A | VGS @ 10V | 1 |+| Continuous Drain Current at TC=100℃ (P-ch) | ID@TC=100℃ | -4 | | | A | VGS @ 10V | 1 |+| Pulsed Drain Current (N-ch) | IDM | | | 20 | A | | 1 |+| Pulsed Drain Current (P-ch) | IDM | -12 | | | A | | 1 |+| Single Pulse Avalanche Energy (N-ch) | EAS | | | 72 | mJ | Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=10A | 1 |+| Single Pulse Avalanche Energy (P-ch) | EAS | | | 59 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-10A | 1 |+| Avalanche Current (N-ch) | IAS | | | 21 | A | | 1 |+| Avalanche Current (P-ch) | IAS | -19 | | | A | | 1 |+| Total Power Dissipation (N-ch) | PD@TC=25℃ | | | 2.5 | W | | 1 |+| Total Power Dissipation (P-ch) | PD@TC=25℃ | | | 2.08 | W | | 1 |+| Storage Temperature Range (N-ch) | TSTG | -55 | | 150 | ℃ | | 1 |+| Storage Temperature Range (P-ch) | TSTG | -55 | | 150 | ℃ | | 1 |+| Operating Junction Temperature Range (N-ch) | TJ | -55 | | 150 | ℃ | | 1 |+| Operating Junction Temperature Range (P-ch) | TJ | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-Ambient | RθJA | | | 85 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |+| Thermal Resistance Junction-Case | RθJC | | | 50 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |+| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 | | | V | VGS=0V, ID=250uA | 2 |+| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | | 18 | 28 | mΩ | VGS=10V, ID=6A | 2 |+| Static Drain-Source On-Resistance (N-ch) | RDS(ON) | | 25 | 32 | mΩ | VGS=4.5V, ID=5A | 2 |+| Gate Threshold Voltage (N-ch) | VGS(th) | 1 | 1.5 | 2.5 | V | | 2 |+| Drain-Source Leakage Current at TJ=25℃ (N-ch) | IDSS | | | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 |+| Drain-Source Leakage Current at TJ=55℃ (N-ch) | IDSS | | | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 |+| Gate-Source Leakage Current (N-ch) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 2 |+| Single Pulse Avalanche Energy (N-ch, guaranteed) | EAS | 16 | | | mJ | VDD=25V, L=0.1mH, IAS=10A | 2 |+| Continuous Source Current (N-ch) | IS | | | 7 | A | | 2 |+| Pulsed Source Current (N-ch) | ISM | | | 20 | A | VG=VD=0V, Force Current | 2 |+| Diode Forward Voltage (N-ch) | VSD | | | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 |+| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 3 |+| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | | 30 | 38 | mΩ | VGS=-10V, ID=-6A | 3 |+| Static Drain-Source On-Resistance (P-ch) | RDS(ON) | | 48 | 58 | mΩ | VGS=-4.5V, ID=-3A | 3 |+| Gate Threshold Voltage (P-ch) | VGS(th) | -1 | -1.5 | -2.5 | V | | 3 |+| Drain-Source Leakage Current at TJ=25℃ (P-ch) | IDSS | | | 1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 3 |+| Drain-Source Leakage Current at TJ=55℃ (P-ch) | IDSS | | | 5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 3 |+| Gate-Source Leakage Current (P-ch) | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |+| Single Pulse Avalanche Energy (P-ch, guaranteed) | EAS | 16 | | | mJ | VDD=-25V, L=0.1mH, IAS=-10A | 3 |+| Continuous Source Current (P-ch) | IS | | | -6 | A | | 3 |+| Pulsed Source Current (P-ch) | ISM | | | -12 | A | VG=VD=0V, Force Current | 3 |+| Diode Forward Voltage (P-ch) | VSD | | | -1.2 | V | VGS=0V, IS=-6A, TJ=25℃ | 3 |+| BVDSS Temperature Coefficient (N-ch) | △BVDSS/△TJ | | 0.034 | | V/℃ | Reference to 25℃, ID=1mA | 2 |+| VGS(th) Temperature Coefficient (N-ch) | △VGS(th) | | -5.8 | | mV/℃ | VGS=VDS, ID=250uA | 2 |+| Forward Transconductance (N-ch) | gfs | | 10 | | S | VDS=15V, ID=5A | 2 |+| Gate Resistance (N-ch) | Rg | | 2.5 | | Ω | VDS=24V, VGS=0V, f=1MHz | 2 |+| Total Gate Charge (4.5V) (N-ch) | Qg | | 7.2 | | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |+| Gate-Source Charge (N-ch) | Qgs | | 1.4 | | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |+| Gate-Drain Charge (N-ch) | Qgd | | 2.2 | | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |+| Input Capacitance (N-ch) | Ciss | | 550 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| Output Capacitance (N-ch) | Coss | | 68 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| Reverse Transfer Capacitance (N-ch) | Crss | | 55 | | pF | VDS=25V, VGS=0V, f=1MHz | 2 |+| BVDSS Temperature Coefficient (P-ch) | △BVDSS/△TJ | | -0.085 | | V/℃ | Reference to 25℃, ID=-1mA | 3 |+| VGS(th) Temperature Coefficient (P-ch) | △VGS(th) | | 0.375 | | mV/℃ | VGS=VDS, ID=-250uA | 3 |+| Forward Transconductance (P-ch) | gfs | | 6 | | S | VDS=-10V, ID=-6A | 3 |+| Total Gate Charge (-4.5V) (P-ch) | Qg | | 6.4 | | nC | VDS=-20V, VGS=-4.5V, ID=-6A | 3 |+| Input Capacitance (P-ch) | Ciss | | 645 | | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |+| Reverse Transfer Capacitance (P-ch) | Crss | | 105 | | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |+ ## CAD (KiCad official) - Symbol: `WSP4606`
page.json+728−1@@ -178,6 +178,733 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5e88037c1fac0b17",+ "rows": [+ {+ "name": "Drain-Source Voltage (N-ch)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage (P-ch)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (N-ch)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (P-ch)",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (N-ch)",+ "symbol": "ID@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (P-ch)",+ "symbol": "ID@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -6,+ "typ": null,+ "max": null,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current at TC=100℃ (N-ch)",+ "symbol": "ID@TC=100℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current at TC=100℃ (P-ch)",+ "symbol": "ID@TC=100℃",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -4,+ "typ": null,+ "max": null,+ "conditions": "VGS @ 10V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (N-ch)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current (P-ch)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -12,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (N-ch)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=10A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (P-ch)",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 59,+ "conditions": "Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-10A",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current (N-ch)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 21,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Current (P-ch)",+ "symbol": "IAS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -19,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation (N-ch)",+ "symbol": "PD@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation (P-ch)",+ "symbol": "PD@TC=25℃",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.08,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range (N-ch)",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range (P-ch)",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range (N-ch)",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction Temperature Range (P-ch)",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 85,+ "conditions": "Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (N-ch)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (N-ch)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 18,+ "max": 28,+ "conditions": "VGS=10V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (N-ch)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 25,+ "max": 32,+ "conditions": "VGS=4.5V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (N-ch)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.5,+ "max": 2.5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current at TJ=25℃ (N-ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=30V, VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current at TJ=55℃ (N-ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=30V, VGS=0V, TJ=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current (N-ch)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (N-ch, guaranteed)",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": 16,+ "typ": null,+ "max": null,+ "conditions": "VDD=25V, L=0.1mH, IAS=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (N-ch)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (N-ch)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (N-ch)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.2,+ "conditions": "VGS=0V, IS=5A, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage (P-ch)",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (P-ch)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 30,+ "max": 38,+ "conditions": "VGS=-10V, ID=-6A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance (P-ch)",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 48,+ "max": 58,+ "conditions": "VGS=-4.5V, ID=-3A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage (P-ch)",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.5,+ "max": -2.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current at TJ=25℃ (P-ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=-24V, VGS=0V, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Leakage Current at TJ=55℃ (P-ch)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=-24V, VGS=0V, TJ=55℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current (P-ch)",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy (P-ch, guaranteed)",+ "symbol": "EAS",+ "kind": "electrical",+ "unit": "mJ",+ "min": 16,+ "typ": null,+ "max": null,+ "conditions": "VDD=-25V, L=0.1mH, IAS=-10A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (P-ch)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -6,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (P-ch)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -12,+ "conditions": "VG=VD=0V, Force Current",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage (P-ch)",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.2,+ "conditions": "VGS=0V, IS=-6A, TJ=25℃",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "BVDSS Temperature Coefficient (N-ch)",+ "symbol": "△BVDSS/△TJ",+ "kind": "electrical",+ "unit": "V/℃",+ "min": null,+ "typ": 0.034,+ "max": null,+ "conditions": "Reference to 25℃, ID=1mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "VGS(th) Temperature Coefficient (N-ch)",+ "symbol": "△VGS(th)",+ "kind": "electrical",+ "unit": "mV/℃",+ "min": null,+ "typ": -5.8,+ "max": null,+ "conditions": "VGS=VDS, ID=250uA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (N-ch)",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDS=15V, ID=5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance (N-ch)",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "VDS=24V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (4.5V) (N-ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7.2,+ "max": null,+ "conditions": "VDS=20V, VGS=4.5V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge (N-ch)",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.4,+ "max": null,+ "conditions": "VDS=20V, VGS=4.5V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge (N-ch)",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "VDS=20V, VGS=4.5V, ID=6A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (N-ch)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 550,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance (N-ch)",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 68,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (N-ch)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 55,+ "max": null,+ "conditions": "VDS=25V, VGS=0V, f=1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "BVDSS Temperature Coefficient (P-ch)",+ "symbol": "△BVDSS/△TJ",+ "kind": "electrical",+ "unit": "V/℃",+ "min": null,+ "typ": -0.085,+ "max": null,+ "conditions": "Reference to 25℃, ID=-1mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "VGS(th) Temperature Coefficient (P-ch)",+ "symbol": "△VGS(th)",+ "kind": "electrical",+ "unit": "mV/℃",+ "min": null,+ "typ": 0.375,+ "max": null,+ "conditions": "VGS=VDS, ID=-250uA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance (P-ch)",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 6,+ "max": null,+ "conditions": "VDS=-10V, ID=-6A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge (-4.5V) (P-ch)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 6.4,+ "max": null,+ "conditions": "VDS=-20V, VGS=-4.5V, ID=-6A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance (P-ch)",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 645,+ "max": null,+ "conditions": "VDS=-25V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance (P-ch)",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 105,+ "max": null,+ "conditions": "VDS=-25V, VGS=0V, f=1MHz",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +946,4 @@ "visibility": { "public": true }-}+}