# VBFB16R04

**VBsemi Elec** · MOSFETs · TO-251

VBFB16R04 from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum with a threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; drain-source voltage is rated at 600 V, with continuous drain current of 4 A at TC = 25 °C. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous source-drain diode current of 4.0 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 600 |  |  | V | VGS = 0 V, ID = 250 μA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 250 μA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = 20 | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 100 | μA | VDS = 600 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current at 125 °C | IDSS |  |  | 500 | μA | VDS = 480 V, VGS = 0 V, TJ = 125 °C | 2 |
| Forward Transconductance | gfs | 3.7 |  |  | S | VDS = 100 V, ID = 3.7 A | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 4 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 25 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 1.5 | V | TJ = 25 °C, IS = 4 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 440 | 680 | ns | TJ = 25 °C, IF = 4 A, dI/dt = 100 A/μs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 2.1 | 3.2 | μC |  | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 2.2 |  | Ω | VGS = 10 V, ID = 3.7 A | 2 |
| Input Capacitance | Ciss |  | 1100 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Output Capacitance | Coss |  | 140 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 15 |  | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 |
| Total Gate Charge | Qg |  |  | 39 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 |
| Gate-Source Charge | Qgs |  |  | 10 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 |
| Gate-Drain Charge | Qgd |  |  | 19 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 |
| Turn-On Delay Time | td(on) |  | 12 |  | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 |
| Rise Time | tr |  | 20 |  | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 27 |  | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 |
| Fall Time | tf |  | 17 |  | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 |
| Internal Drain Inductance | LD |  | 4.5 |  | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 |
| Internal Source Inductance | LS |  | 7.5 |  | nH |  | 2 |
| VDS Temperature Coefficient | VDS/TJ |  | 0.7 |  | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
| Maximum Junction-to-Ambient | RthJA |  |  | 62 | °C/W |  | 2 |
| Case-to-Sink, Flat, Greased Surface | RthCS |  | 0.5 |  | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 1 | °C/W |  | 2 |
| Drain-Source Voltage | VDS |  |  | 600 | V |  | 1 |
| Gate-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 4 | A | VGS at 10 V, TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 2.9 | A | VGS at 10 V, TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 25 | A |  | 1 |
| Linear Derating Factor |  |  |  | 1 | W/°C |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 530 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 Ω, IAS = 6.2 A | 1 |
| Repetitive Avalanche Current | IAR |  |  | 6.2 | A |  | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 13 | mJ |  | 1 |
| Maximum Power Dissipation | PD |  |  | 125 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 3 | V/ns | ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Mounting Torque |  |  |  | 10 | lbf·in | 6-32 or M3 screw | 1 |

## CAD (KiCad official)

- Symbol: `VBFB16R04`
- Footprint: `Package_TO_SOT_THT:TO-251-3_Vertical`
- 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files: `vbfb16r04-etched.step` / `vbfb16r04-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `vbfb16r04.step` / `vbfb16r04.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/vbfb16r04-datasheet.pdf) (11 pp, sha256 `db0d4ebef6bda81c`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/vbfb16r04-datasheet.pdf)