component
VBFB16R04
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownVBFB16R04
VBsemi Elec · MOSFETs · TO-251
VBFB16R04 from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated at ±30 V maximum with a threshold of 2.0 to 4.0 V. |
| 2 | D | passive | Drain; drain-source voltage is rated at 600 V, with continuous drain current of 4 A at TC = 25 °C. |
| 3 | S | passive | Source; connects to the body diode anode, with continuous source-drain diode current of 4.0 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 600 | V | VGS = 0 V, ID = 250 μA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 2 | 4 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = 20 | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 100 | μA | VDS = 600 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current at 125 °C | IDSS | 500 | μA | VDS = 480 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Forward Transconductance | gfs | 3.7 | S | VDS = 100 V, ID = 3.7 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 4 | A | MOSFET symbol showing the integral reverse p-n junction diode | 2 | ||
| Pulsed Diode Forward Current | ISM | 25 | A | 2 | |||
| Body Diode Voltage | VSD | 1.5 | V | TJ = 25 °C, IS = 4 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 440 | 680 | ns | TJ = 25 °C, IF = 4 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 2.1 | 3.2 | μC | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 2.2 | Ω | VGS = 10 V, ID = 3.7 A | 2 | ||
| Input Capacitance | Ciss | 1100 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 140 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 15 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Total Gate Charge | Qg | 39 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 | ||
| Gate-Source Charge | Qgs | 10 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 | ||
| Gate-Drain Charge | Qgd | 19 | nC | VGS = 10 V, ID = 4 A, VDS = 360 V | 2 | ||
| Turn-On Delay Time | td(on) | 12 | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 | ||
| Rise Time | tr | 20 | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 27 | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 | ||
| Fall Time | tf | 17 | ns | VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| VDS Temperature Coefficient | VDS/TJ | 0.7 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Case-to-Sink, Flat, Greased Surface | RthCS | 0.5 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 1 | °C/W | 2 | |||
| Drain-Source Voltage | VDS | 600 | V | 1 | |||
| Gate-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 4 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 2.9 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 25 | A | 1 | |||
| Linear Derating Factor | 1 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 530 | mJ | VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 Ω, IAS = 6.2 A | 1 | ||
| Repetitive Avalanche Current | IAR | 6.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 13 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 125 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 3 | V/ns | ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Mounting Torque | 10 | lbf·in | 6-32 or M3 screw | 1 |
CAD (KiCad official)
- Symbol:
VBFB16R04 - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
vbfb16r04-etched.step/vbfb16r04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);vbfb16r04.step/vbfb16r04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (11 pp, sha256
db0d4ebef6bda81c, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).