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VBFB16R04

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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VBFB16R04

VBsemi Elec · MOSFETs · TO-251

VBFB16R04 from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±30 V maximum with a threshold of 2.0 to 4.0 V.
2 D passive Drain; drain-source voltage is rated at 600 V, with continuous drain current of 4 A at TC = 25 °C.
3 S passive Source; connects to the body diode anode, with continuous source-drain diode current of 4.0 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS 600 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = 20 2
Zero Gate Voltage Drain Current IDSS 100 μA VDS = 600 V, VGS = 0 V 2
Zero Gate Voltage Drain Current at 125 °C IDSS 500 μA VDS = 480 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 3.7 S VDS = 100 V, ID = 3.7 A 2
Continuous Source-Drain Diode Current IS 4 A MOSFET symbol showing the integral reverse p-n junction diode 2
Pulsed Diode Forward Current ISM 25 A 2
Body Diode Voltage VSD 1.5 V TJ = 25 °C, IS = 4 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 440 680 ns TJ = 25 °C, IF = 4 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 2.1 3.2 μC 2
Drain-Source On-State Resistance RDS(on) 2.2 Ω VGS = 10 V, ID = 3.7 A 2
Input Capacitance Ciss 1100 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Output Capacitance Coss 140 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Reverse Transfer Capacitance Crss 15 pF VGS = 0 V, VDS = 25 V, f = 1.0 MHz 2
Total Gate Charge Qg 39 nC VGS = 10 V, ID = 4 A, VDS = 360 V 2
Gate-Source Charge Qgs 10 nC VGS = 10 V, ID = 4 A, VDS = 360 V 2
Gate-Drain Charge Qgd 19 nC VGS = 10 V, ID = 4 A, VDS = 360 V 2
Turn-On Delay Time td(on) 12 ns VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω 2
Rise Time tr 20 ns VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω 2
Turn-Off Delay Time td(off) 27 ns VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω 2
Fall Time tf 17 ns VDD = 300 V, ID = 4 A, Rg = 9.1 Ω, RD = 47 Ω 2
Internal Drain Inductance LD 4.5 nH Between lead, 6 mm (0.25") from package and center of die contact 2
Internal Source Inductance LS 7.5 nH 2
VDS Temperature Coefficient VDS/TJ 0.7 V/°C Reference to 25 °C, ID = 1 mA 2
Maximum Junction-to-Ambient RthJA 62 °C/W 2
Case-to-Sink, Flat, Greased Surface RthCS 0.5 °C/W 2
Maximum Junction-to-Case (Drain) RthJC 1 °C/W 2
Drain-Source Voltage VDS 600 V 1
Gate-Source Voltage VGS -30 30 V 1
Continuous Drain Current ID 4 A VGS at 10 V, TC = 25 °C 1
Continuous Drain Current ID 2.9 A VGS at 10 V, TC = 100 °C 1
Pulsed Drain Current IDM 25 A 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 530 mJ VDD = 50 V, starting TJ = 25 °C, L = 25 mH, Rg = 25 Ω, IAS = 6.2 A 1
Repetitive Avalanche Current IAR 6.2 A 1
Repetitive Avalanche Energy EAR 13 mJ 1
Maximum Power Dissipation PD 125 W TC = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 3 V/ns ISD ≤ 6.2 A, dI/dt ≤ 80 A/μs, VDD ≤ VDS, TJ ≤ 150 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Mounting Torque 10 lbf·in 6-32 or M3 screw 1

CAD (KiCad official)

  • Symbol: VBFB16R04
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: vbfb16r04-etched.step / vbfb16r04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); vbfb16r04.step / vbfb16r04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (11 pp, sha256 db0d4ebef6bda81c, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF