# UTT30N06G

**UTC Unisonic Tech** · MOSFETs · TO-252

UTT30N06G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDSS of 60 V and a continuous drain current ID of 30 A (TC=25°C). |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for the gate drive and the source of the body diode rated for IS of 30 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 |  |  | V | VGS=0V, ID=250μA | 4 |
| Drain-Source Leakage Current | IDSS |  |  | 10 | μA | VDS=60V, VGS=0V | 4 |
| Gate-Source Leakage Current Forward | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 4 |
| Gate-Source Leakage Current Reverse | IGSS |  |  | -100 | nA | VGS=-20V, VDS=0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 1 |  | 3 | V | VDS=VGS, ID=250μA | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 22 | mΩ | VGS=10V, ID=15A | 4 |
| Static Drain-Source On-State Resistance | RDS(ON) |  |  | 30 | mΩ | VGS=4.5V, ID=15A | 4 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 30 | A |  | 4 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 60 | A |  | 4 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.4 | V | VGS=0V, IS=30A | 4 |
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 3 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 3 |
| Drain Current Continuous | ID |  |  | 30 | A |  | 3 |
| Pulsed Drain Current | IDM |  |  | 60 | A | Note 2: repetitive rating, pulse width limited by junction temperature | 3 |
| Avalanche Energy Single Pulsed | EAS |  |  | 20.7 | mJ | L=0.1mH, IAS=20.35A, VDD=50V, RG=20Ω, Starting TJ=25°C | 3 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 9.2 | V/ns | ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 3 |
| Power Dissipation TO-251/TO-252 / TO-252D | PD |  |  | 50 | W |  | 3 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 3 |
| Operation Temperature | TOPR | -55 |  | 150 | °C |  | 3 |
| Storage Temperature | TSTG | -55 |  | 150 | °C |  | 3 |
| Junction to Ambient TO-251/TO-252 / TO-252D | θJA |  | 110 |  | °C/W | Note: device mounted on FR-4 PC board, 2oz copper, 1 inch square copper plate | 3 |
| Junction to Case TO-251/TO-252 / TO-252D | θJC |  | 2.5 |  | °C/W |  | 3 |

## CAD (KiCad official)

- Symbol: `UTT30N06G`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `utt30n06g-etched.step` / `utt30n06g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `utt30n06g.step` / `utt30n06g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UTC Unisonic Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078201191251968) (9 pp, sha256 `15ed4112f0c46cf9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/utt30n06g-datasheet.pdf)