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UTT30N06G

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UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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UTT30N06G

UTC Unisonic Tech · MOSFETs · TO-252

UTT30N06G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±20 V.
2 D passive Drain of the N-channel MOSFET, rated for a drain-source voltage VDSS of 60 V and a continuous drain current ID of 30 A (TC=25°C).
3 S passive Source of the N-channel MOSFET, the reference terminal for the gate drive and the source of the body diode rated for IS of 30 A.

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 4
Drain-Source Leakage Current IDSS 10 μA VDS=60V, VGS=0V 4
Gate-Source Leakage Current Forward IGSS 100 nA VGS=20V, VDS=0V 4
Gate-Source Leakage Current Reverse IGSS -100 nA VGS=-20V, VDS=0V 4
Gate Threshold Voltage VGS(TH) 1 3 V VDS=VGS, ID=250μA 4
Static Drain-Source On-State Resistance RDS(ON) 22 mΩ VGS=10V, ID=15A 4
Static Drain-Source On-State Resistance RDS(ON) 30 mΩ VGS=4.5V, ID=15A 4
Maximum Continuous Drain-Source Diode Forward Current IS 30 A 4
Maximum Pulsed Drain-Source Diode Forward Current ISM 60 A 4
Drain-Source Diode Forward Voltage VSD 1.4 V VGS=0V, IS=30A 4
Drain-Source Voltage VDSS 60 V 3
Gate-Source Voltage VGSS -20 20 V 3
Drain Current Continuous ID 30 A 3
Pulsed Drain Current IDM 60 A Note 2: repetitive rating, pulse width limited by junction temperature 3
Avalanche Energy Single Pulsed EAS 20.7 mJ L=0.1mH, IAS=20.35A, VDD=50V, RG=20Ω, Starting TJ=25°C 3
Peak Diode Recovery dv/dt dv/dt 9.2 V/ns ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C 3
Power Dissipation TO-251/TO-252 / TO-252D PD 50 W 3
Junction Temperature TJ 150 °C 3
Operation Temperature TOPR -55 150 °C 3
Storage Temperature TSTG -55 150 °C 3
Junction to Ambient TO-251/TO-252 / TO-252D θJA 110 °C/W Note: device mounted on FR-4 PC board, 2oz copper, 1 inch square copper plate 3
Junction to Case TO-251/TO-252 / TO-252D θJC 2.5 °C/W 3

CAD (KiCad official)

  • Symbol: UTT30N06G
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: utt30n06g-etched.step / utt30n06g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); utt30n06g.step / utt30n06g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256 15ed4112f0c46cf9, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF