component
UTT30N06G
Public Made by Adomby adom
UTC Unisonic Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownUTT30N06G
UTC Unisonic Tech · MOSFETs · TO-252
UTT30N06G from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage VGSS of ±20 V. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source voltage VDSS of 60 V and a continuous drain current ID of 30 A (TC=25°C). |
| 3 | S | passive | Source of the N-channel MOSFET, the reference terminal for the gate drive and the source of the body diode rated for IS of 30 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC Unisonic Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250μA | 4 | ||
| Drain-Source Leakage Current | IDSS | 10 | μA | VDS=60V, VGS=0V | 4 | ||
| Gate-Source Leakage Current Forward | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Gate-Source Leakage Current Reverse | IGSS | -100 | nA | VGS=-20V, VDS=0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS=VGS, ID=250μA | 4 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 22 | mΩ | VGS=10V, ID=15A | 4 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 30 | mΩ | VGS=4.5V, ID=15A | 4 | ||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 30 | A | 4 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 60 | A | 4 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.4 | V | VGS=0V, IS=30A | 4 | ||
| Drain-Source Voltage | VDSS | 60 | V | 3 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 3 | ||
| Drain Current Continuous | ID | 30 | A | 3 | |||
| Pulsed Drain Current | IDM | 60 | A | Note 2: repetitive rating, pulse width limited by junction temperature | 3 | ||
| Avalanche Energy Single Pulsed | EAS | 20.7 | mJ | L=0.1mH, IAS=20.35A, VDD=50V, RG=20Ω, Starting TJ=25°C | 3 | ||
| Peak Diode Recovery dv/dt | dv/dt | 9.2 | V/ns | ISD≤30A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25°C | 3 | ||
| Power Dissipation TO-251/TO-252 / TO-252D | PD | 50 | W | 3 | |||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Operation Temperature | TOPR | -55 | 150 | °C | 3 | ||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Junction to Ambient TO-251/TO-252 / TO-252D | θJA | 110 | °C/W | Note: device mounted on FR-4 PC board, 2oz copper, 1 inch square copper plate | 3 | ||
| Junction to Case TO-251/TO-252 / TO-252D | θJC | 2.5 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
UTT30N06G - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
utt30n06g-etched.step/utt30n06g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);utt30n06g.step/utt30n06g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC Unisonic Tech datasheet (9 pp, sha256
15ed4112f0c46cf9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).