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Ray tps5432ddar: specified limits as data (metadata.characteristics, 54 rows from the datasheet) 470ad55 26d ago

TPS5432DDAR

Texas Instruments · DC-DC Converters · HSOP-8-EP

TPS5432DDAR from Texas Instruments, in a HSOP-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BOOT output Bootstrap supply pin for high-side MOSFET gate drive; requires 0.1µF ceramic capacitor (X7R/X5R, ≥10V rating) connected between BOOT and PH.
2 VIN power_in Power supply input for control circuitry and power converter switches; operating range 2.95V to 6V.
3 PH output Phase switching node; source of high-side MOSFET and drain of low-side synchronous rectifier MOSFET.
4 GND power_in Ground reference; must be electrically connected directly to exposed thermal pad for proper operation.
5 VSENSE input Inverting input node to transconductance error amplifier; connected to output voltage feedback network via external resistor divider.
6 COMP output Error amplifier output and input to output switch current comparator; frequency compensation network connected to this pin.
7 EN input Enable control input with internal pull-up current source; pull to ground to disable switching and reduce quiescent current to ≤5µA.
8 SS input Slow start control input; external capacitor to ground sets the output voltage rise time during power-up.
9 THERMAL PAD power_in Exposed ground pad for thermal management; must be connected to internal PCB ground plane using multiple vias for proper thermal performance.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package HSOP-8-EP
Category Power Management (PMIC)
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input voltage VIN VIN -0.3 7 V 3
Input voltage EN EN -0.3 3.6 V 3
Input voltage BOOT (PH + 7) BOOT 7 V 3
Input voltage VSENSE VSENSE -0.3 3 V 3
Input voltage COMP COMP -0.3 3 V 3
Input voltage SS SS -0.3 3 V 3
Output voltage BOOT-PH BOOT-PH 7 V 3
Output voltage PH PH -0.6 7 V 3
Output voltage PH transient PH -2 10 V 10 ns transient 3
Source current EN 100 µA 3
Sink current COMP 100 µA 3
Sink current SS 100 µA 3
Electrostatic discharge (HBM) 2 kV QSS 009-105 (JESD22-A114A) 3
Electrostatic discharge (CDM) 500 V QSS 009-147 (JESD22-C101B.01) 3
Junction temperature TJ -40 150 °C 3
Storage temperature Tstg -65 150 °C 3
Supply voltage Vin 2.95 6 V TJ = –40°C to 125°C 4
Shutdown quiescent current Iq 2 5 µA EN = 0V, 25°C, 2.95 V < Vin < 6 V 4
Operating quiescent current Iq 360 575 µA No load, Vin = 5 V, no switching, Vsense = 1 V, 25°C 4
Input UVLO threshold 2.6 2.8 V Rising Vin 4
Enable threshold 0.984 1.23 1.47 V Rising 4
Enable threshold 0.952 1.19 V Falling 4
Voltage reference 0.792 0.808 0.824 V 2.95 V < Vin < 6 V, TJ = 25°C 4
Voltage reference 0.784 0.808 0.832 V 2.95 V < Vin < 6 V, –40°C < TJ < +125°C 4
H.S switch resistance 62 86 mΩ BOOT-PH = 5 V, TJ = 25°C 4
L.S switch resistance 73 103 mΩ Vin = 5 V, TJ = 25°C 4
H.S switch resistance 88 114 mΩ BOOT-PH = 2.95 V, TJ = 25°C 4
L.S switch resistance 94 128 mΩ Vin = 2.95 V, TJ = 25°C 4
High side current limit (I max) I max 3.8 5.7 7 A Vin = 3.3 V, duty cycle = 100% 4
Low side current limit (I max) I max 0.8 1.8 A 4
Thermal shutdown 155 170 C 4
Switching frequency 520 700 880 kHz 4
Minimum on time 120 150 ns Vin = 5 V; Measured at 50% points on PH, Iout = 3 A 4
Error amp source/sink -20 20 µA V(COMP) = 1 V, 100 mV overdrive 4
UVLO hysteresis 0.2 V 4
Input current -4.6 µA Enable threshold +50 mV 4
Input current -1.2 µA Enable threshold –50 mV 4
Error amp transconductance (gm) gm 245 µmho –2 µA < ICOMP < 2 µA, V(COMP) = 1 V 4
Error amp transconductance (gm) during soft start gm 70 µmho –2 µA < ICOMP < 2 µA, V(COMP) = 1 V, Vsense = 0.3 V 4
COMP to Iph gm 15 A/V Vin = 5 V, Iph1 = (0.5 or 1A) and Iph2 = 3 A 4
Vsense voltage for Fs foldback 50% frequency 0.4 V 4
Vsense voltage for Fs foldback 25% frequency 0.2 V 4
OT hysteresis 15 C 4
Minimum off time 60 ns Prior to skipping off pulses, BOOT-PH = 2.95 V, Iout = 3 A 4
Rise/Fall time 1.5 V/ns Vin = 5 V, Io = 0 A 4
Boot recharge FET resistance 15 Ω Vin = 5 V 4
Boot UVLO 2.1 V Vin = 2.95 V 4
Slow start charge current 2 μA Vss = 0.4 V 4
Junction-to-ambient thermal resistance (θJA) θJA 42.1 °C/W DDA (8 pins) 3
Junction-to-case (top) thermal resistance (θJCtop) θJCtop 50.9 °C/W DDA (8 pins) 3
Junction-to-board thermal resistance (θJB) θJB 31.8 °C/W DDA (8 pins) 3
Junction-to-top characterization parameter (ψJT) ψJT 5 °C/W DDA (8 pins) 3
Junction-to-board characterization parameter (ψJB) ψJB 13.5 °C/W DDA (8 pins) 3
Junction-to-case (bottom) thermal resistance (θJCbot) θJCbot 7.1 °C/W DDA (8 pins) 3

CAD (KiCad official)

  • Symbol: TPS5432DDAR
  • Footprint: Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm
  • 3D model: HSOP-8-EP (KiCad packages3D, STEP)
  • 3D model files: tps5432ddar-etched.step / tps5432ddar-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tps5432ddar.step / tps5432ddar.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (33 pp, sha256 e71b7195621bdd29, retrieved 2026-09-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF