component
TPS5432DDAR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, HSOP-8-EP. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 1mo ago |
| viewers | 1mo ago |
| package.json | 1mo ago |
| page.json | 26d ago |
| README.md | 26d ago |
| tps5432ddar-etched.fit.json | 1mo ago |
| tps5432ddar-etched.glb | 1mo ago |
| tps5432ddar-etched.step | 1mo ago |
| tps5432ddar.glb | 1mo ago |
| tps5432ddar.kicad_mod | 1mo ago |
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| tps5432ddar.step | 1mo ago |
TPS5432DDAR
Texas Instruments · DC-DC Converters · HSOP-8-EP
TPS5432DDAR from Texas Instruments, in a HSOP-8-EP. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BOOT | output | Bootstrap supply pin for high-side MOSFET gate drive; requires 0.1µF ceramic capacitor (X7R/X5R, ≥10V rating) connected between BOOT and PH. |
| 2 | VIN | power_in | Power supply input for control circuitry and power converter switches; operating range 2.95V to 6V. |
| 3 | PH | output | Phase switching node; source of high-side MOSFET and drain of low-side synchronous rectifier MOSFET. |
| 4 | GND | power_in | Ground reference; must be electrically connected directly to exposed thermal pad for proper operation. |
| 5 | VSENSE | input | Inverting input node to transconductance error amplifier; connected to output voltage feedback network via external resistor divider. |
| 6 | COMP | output | Error amplifier output and input to output switch current comparator; frequency compensation network connected to this pin. |
| 7 | EN | input | Enable control input with internal pull-up current source; pull to ground to disable switching and reduce quiescent current to ≤5µA. |
| 8 | SS | input | Slow start control input; external capacitor to ground sets the output voltage rise time during power-up. |
| 9 | THERMAL PAD | power_in | Exposed ground pad for thermal management; must be connected to internal PCB ground plane using multiple vias for proper thermal performance. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | HSOP-8-EP |
| Category | Power Management (PMIC) |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Input voltage VIN | VIN | -0.3 | 7 | V | 3 | ||
| Input voltage EN | EN | -0.3 | 3.6 | V | 3 | ||
| Input voltage BOOT (PH + 7) | BOOT | 7 | V | 3 | |||
| Input voltage VSENSE | VSENSE | -0.3 | 3 | V | 3 | ||
| Input voltage COMP | COMP | -0.3 | 3 | V | 3 | ||
| Input voltage SS | SS | -0.3 | 3 | V | 3 | ||
| Output voltage BOOT-PH | BOOT-PH | 7 | V | 3 | |||
| Output voltage PH | PH | -0.6 | 7 | V | 3 | ||
| Output voltage PH transient | PH | -2 | 10 | V | 10 ns transient | 3 | |
| Source current EN | 100 | µA | 3 | ||||
| Sink current COMP | 100 | µA | 3 | ||||
| Sink current SS | 100 | µA | 3 | ||||
| Electrostatic discharge (HBM) | 2 | kV | QSS 009-105 (JESD22-A114A) | 3 | |||
| Electrostatic discharge (CDM) | 500 | V | QSS 009-147 (JESD22-C101B.01) | 3 | |||
| Junction temperature | TJ | -40 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| Supply voltage | Vin | 2.95 | 6 | V | TJ = –40°C to 125°C | 4 | |
| Shutdown quiescent current | Iq | 2 | 5 | µA | EN = 0V, 25°C, 2.95 V < Vin < 6 V | 4 | |
| Operating quiescent current | Iq | 360 | 575 | µA | No load, Vin = 5 V, no switching, Vsense = 1 V, 25°C | 4 | |
| Input UVLO threshold | 2.6 | 2.8 | V | Rising Vin | 4 | ||
| Enable threshold | 0.984 | 1.23 | 1.47 | V | Rising | 4 | |
| Enable threshold | 0.952 | 1.19 | V | Falling | 4 | ||
| Voltage reference | 0.792 | 0.808 | 0.824 | V | 2.95 V < Vin < 6 V, TJ = 25°C | 4 | |
| Voltage reference | 0.784 | 0.808 | 0.832 | V | 2.95 V < Vin < 6 V, –40°C < TJ < +125°C | 4 | |
| H.S switch resistance | 62 | 86 | mΩ | BOOT-PH = 5 V, TJ = 25°C | 4 | ||
| L.S switch resistance | 73 | 103 | mΩ | Vin = 5 V, TJ = 25°C | 4 | ||
| H.S switch resistance | 88 | 114 | mΩ | BOOT-PH = 2.95 V, TJ = 25°C | 4 | ||
| L.S switch resistance | 94 | 128 | mΩ | Vin = 2.95 V, TJ = 25°C | 4 | ||
| High side current limit (I max) | I max | 3.8 | 5.7 | 7 | A | Vin = 3.3 V, duty cycle = 100% | 4 |
| Low side current limit (I max) | I max | 0.8 | 1.8 | A | 4 | ||
| Thermal shutdown | 155 | 170 | C | 4 | |||
| Switching frequency | 520 | 700 | 880 | kHz | 4 | ||
| Minimum on time | 120 | 150 | ns | Vin = 5 V; Measured at 50% points on PH, Iout = 3 A | 4 | ||
| Error amp source/sink | -20 | 20 | µA | V(COMP) = 1 V, 100 mV overdrive | 4 | ||
| UVLO hysteresis | 0.2 | V | 4 | ||||
| Input current | -4.6 | µA | Enable threshold +50 mV | 4 | |||
| Input current | -1.2 | µA | Enable threshold –50 mV | 4 | |||
| Error amp transconductance (gm) | gm | 245 | µmho | –2 µA < ICOMP < 2 µA, V(COMP) = 1 V | 4 | ||
| Error amp transconductance (gm) during soft start | gm | 70 | µmho | –2 µA < ICOMP < 2 µA, V(COMP) = 1 V, Vsense = 0.3 V | 4 | ||
| COMP to Iph gm | 15 | A/V | Vin = 5 V, Iph1 = (0.5 or 1A) and Iph2 = 3 A | 4 | |||
| Vsense voltage for Fs foldback 50% frequency | 0.4 | V | 4 | ||||
| Vsense voltage for Fs foldback 25% frequency | 0.2 | V | 4 | ||||
| OT hysteresis | 15 | C | 4 | ||||
| Minimum off time | 60 | ns | Prior to skipping off pulses, BOOT-PH = 2.95 V, Iout = 3 A | 4 | |||
| Rise/Fall time | 1.5 | V/ns | Vin = 5 V, Io = 0 A | 4 | |||
| Boot recharge FET resistance | 15 | Ω | Vin = 5 V | 4 | |||
| Boot UVLO | 2.1 | V | Vin = 2.95 V | 4 | |||
| Slow start charge current | 2 | μA | Vss = 0.4 V | 4 | |||
| Junction-to-ambient thermal resistance (θJA) | θJA | 42.1 | °C/W | DDA (8 pins) | 3 | ||
| Junction-to-case (top) thermal resistance (θJCtop) | θJCtop | 50.9 | °C/W | DDA (8 pins) | 3 | ||
| Junction-to-board thermal resistance (θJB) | θJB | 31.8 | °C/W | DDA (8 pins) | 3 | ||
| Junction-to-top characterization parameter (ψJT) | ψJT | 5 | °C/W | DDA (8 pins) | 3 | ||
| Junction-to-board characterization parameter (ψJB) | ψJB | 13.5 | °C/W | DDA (8 pins) | 3 | ||
| Junction-to-case (bottom) thermal resistance (θJCbot) | θJCbot | 7.1 | °C/W | DDA (8 pins) | 3 |
CAD (KiCad official)
- Symbol:
TPS5432DDAR - Footprint:
Package_SO:SOIC-8-1EP_3.9x4.9mm_P1.27mm_EP2.41x3.3mm - 3D model: HSOP-8-EP (KiCad packages3D, STEP)
- 3D model files:
tps5432ddar-etched.step/tps5432ddar-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tps5432ddar.step/tps5432ddar.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (33 pp, sha256
e71b7195621bdd29, retrieved 2026-09-22, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).