component
TPS5420DR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOIC-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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Ray
tps5420dr: specified limits as data (metadata.characteristics, 39 rows from the datasheet)
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"name": "BOOT",
"type": "passive",
"description": "Boost capacitor pin for the high-side FET gate driver. Connect a 0.01µF low-ESR ceramic capacitor from BOOT to PH to provide gate drive above VIN."
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{
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{
"number": "4",
"name": "VSENSE",
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"description": "Feedback voltage input for the regulator error amplifier. Connect to the output voltage divider; regulates to VFB = 1.221V typical (adjustable output down to 1.22V)."
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{
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"description": "Active-high enable / on-off control. Below 0.5V the device stops switching; above 1.3V the device starts switching. Internally pulled up via a 1.5MΩ resistor so the pin may be left floating; do not connect through a resistor to ground."
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{
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"description": "Input supply voltage, 5.5V to 36V (40V absolute max). Bypass with a high-quality low-ESR ceramic capacitor placed within 1mm of VIN and GND."
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{
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"description": "Phase / switch node - source of the high-side power MOSFET. Connect to the external inductor and catch (Schottky) diode. Delivers up to 2A continuous (3A peak); on-resistance 110mΩ typical."
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"symbol": "VFB",
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"min": 1.196,
"typ": 1.221,
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"conditions": "TJ = –40°C to 125°C",
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{
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"min": 400,
"typ": 500,
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{
"name": "Minimum ON pulse width",
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{
"name": "Maximum duty cycle",
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"name": "Internal slow-start time (0 to 100%)",
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"name": "High-side peak current limit",
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"name": "ENA voltage falling threshold",
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"min": null,
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{
"name": "ENA voltage hysteresis",
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"name": "High-side MOSFET on-resistance",
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"conditions": "VIN = 5.5V, VBOOT-SW = 4.0V",
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{
"name": "Thermal shutdown hysteresis",
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"min": null,
"typ": 14,
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"name": "Junction-to-case (top) thermal resistance",
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"name": "Junction-to-board thermal resistance",
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"name": "Junction-to-top characterization parameter",
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