component
TPS5420DR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOIC-8. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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tps5420dr: specified limits as data (metadata.characteristics, 39 rows from the datasheet)
2 files changed
+521
README.md+46@@ -33,6 +33,52 @@ Same part, different packaging or reel option. - `TPS5420DR` - `TPS5420DRD` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Input voltage VIN to GND | | -0.3 | | 40 | V | | 4 |+| Input voltage ENA to GND | | -0.3 | | 7 | V | | 4 |+| Input voltage VSENSE to GND | | -0.3 | | 3 | V | | 4 |+| Output voltage BOOT to PH | | -0.3 | | 6 | V | | 4 |+| Output voltage PH to GND | | -0.6 | | 40 | V | Steady-state | 4 |+| Output voltage BOOT to GND | | -0.3 | | | V | | 4 |+| Output voltage PH to GND | | -1.2 | | | V | transient < 10ns | 4 |+| PH leakage current | | | | 10 | µA | | 4 |+| Operating virtual junction temperature TJ | TJ | -40 | | 150 | °C | | 4 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |+| ESD Human-body model (HBM) | V(ESD) | -2000 | | 2000 | V | Per ANSI/ESDA/JEDEC JS-001 | 4 |+| ESD Charged-device model (CDM) | V(ESD) | -750 | | 750 | V | Per JEDEC JESD22-C101 | 4 |+| Input voltage range | | 5.5 | | 36 | V | | 4 |+| Operating junction temperature | TJ | -40 | | 125 | °C | | 4 |+| VIN quiescent current | IQ(VIN) | | 2 | 4.4 | mA | Non-switching, VSENSE = 2V, PH pin open | 5 |+| VIN shutdown supply current | ISD(VIN) | | 15 | 50 | µA | Shutdown, ENA = 0V | 5 |+| VIN UVLO rising threshold | VINUVLO(R) | | 5.3 | 5.5 | V | VVIN rising | 5 |+| FB voltage | VFB | 1.202 | 1.221 | 1.239 | V | TJ = 25°C | 5 |+| FB voltage | VFB | 1.196 | 1.221 | 1.245 | V | TJ = –40°C to 125°C | 5 |+| Switching frequency | fSW | 400 | 500 | 600 | kHz | | 5 |+| Minimum ON pulse width | tON(min) | | 150 | 200 | ns | | 5 |+| Maximum duty cycle | DMAX | | 85 | 89 | % | fSW = 500kHz | 5 |+| Internal slow-start time (0 to 100%) | tSS | 6.6 | 8 | 10 | ms | | 5 |+| High-side peak current limit | IHS(OC) | 3 | 4 | 5 | A | | 5 |+| Hiccup time before re-start | | 13 | 16 | 20 | ms | | 5 |+| High-side MOSFET on-resistance | RDSON(HS) | | 100 | 230 | mΩ | VIN = 12V, VBOOT-SW = 4.5V | 5 |+| Thermal shutdown threshold | TJ(SD) | | 135 | 162 | °C | Temperature rising | 5 |+| VIN UVLO hysteresis | VINUVLO(H) | | 0.35 | | V | | 5 |+| ENA voltage rising threshold | VEN(R) | | 1.3 | | V | | 5 |+| ENA voltage falling threshold | VEN(F) | | 0.5 | | V | | 5 |+| ENA voltage hysteresis | VEN(H) | | 325 | | mV | | 5 |+| High-side MOSFET on-resistance | RDSON(HS) | | 125 | | mΩ | VIN = 5.5V, VBOOT-SW = 4.0V | 5 |+| Thermal shutdown hysteresis | TJ(HYS) | | 14 | | °C | | 5 |+| Junction-to-ambient thermal resistance (Custom Board) | RθJA | | 75 | | °C/W | Custom board | 4 |+| Junction-to-ambient thermal resistance (JESD 51-7) | RθJA | | 106 | | °C/W | JESD 51-7, 4-layer JEDEC board | 4 |+| Junction-to-case (top) thermal resistance | RθJC(top) | | 54 | | °C/W | | 4 |+| Junction-to-board thermal resistance | RθJB | | 55 | | °C/W | | 4 |+| Junction-to-top characterization parameter | ψJT | | 15 | | °C/W | | 4 |+| Junction-to-board characterization parameter | ψJB | | 56 | | °C/W | | 4 |+ ## CAD (KiCad official) - Symbol: `TPS5420DR`
page.json+475@@ -160,6 +160,481 @@ "Package": "SOIC-8", "Category": "PMIC", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "cd667e69b40fa9c0",+ "rows": [+ {+ "name": "Input voltage VIN to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input voltage ENA to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input voltage VSENSE to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 3,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage BOOT to PH",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage PH to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.6,+ "typ": null,+ "max": 40,+ "conditions": "Steady-state",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage BOOT to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output voltage PH to GND",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -1.2,+ "typ": null,+ "max": null,+ "conditions": "transient < 10ns",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "PH leakage current",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating virtual junction temperature TJ",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "ESD Human-body model (HBM)",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -2000,+ "typ": null,+ "max": 2000,+ "conditions": "Per ANSI/ESDA/JEDEC JS-001",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "ESD Charged-device model (CDM)",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -750,+ "typ": null,+ "max": 750,+ "conditions": "Per JEDEC JESD22-C101",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Input voltage range",+ "symbol": "",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 5.5,+ "typ": null,+ "max": 36,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "VIN quiescent current",+ "symbol": "IQ(VIN)",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": 2,+ "max": 4.4,+ "conditions": "Non-switching, VSENSE = 2V, PH pin open",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "VIN shutdown supply current",+ "symbol": "ISD(VIN)",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 15,+ "max": 50,+ "conditions": "Shutdown, ENA = 0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "VIN UVLO rising threshold",+ "symbol": "VINUVLO(R)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 5.3,+ "max": 5.5,+ "conditions": "VVIN rising",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "FB voltage",+ "symbol": "VFB",+ "kind": "electrical",+ "unit": "V",+ "min": 1.202,+ "typ": 1.221,+ "max": 1.239,+ "conditions": "TJ = 25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "FB voltage",+ "symbol": "VFB",+ "kind": "electrical",+ "unit": "V",+ "min": 1.196,+ "typ": 1.221,+ "max": 1.245,+ "conditions": "TJ = –40°C to 125°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Switching frequency",+ "symbol": "fSW",+ "kind": "electrical",+ "unit": "kHz",+ "min": 400,+ "typ": 500,+ "max": 600,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Minimum ON pulse width",+ "symbol": "tON(min)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 150,+ "max": 200,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Maximum duty cycle",+ "symbol": "DMAX",+ "kind": "electrical",+ "unit": "%",+ "min": null,+ "typ": 85,+ "max": 89,+ "conditions": "fSW = 500kHz",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Internal slow-start time (0 to 100%)",+ "symbol": "tSS",+ "kind": "electrical",+ "unit": "ms",+ "min": 6.6,+ "typ": 8,+ "max": 10,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side peak current limit",+ "symbol": "IHS(OC)",+ "kind": "electrical",+ "unit": "A",+ "min": 3,+ "typ": 4,+ "max": 5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Hiccup time before re-start",+ "symbol": "",+ "kind": "electrical",+ "unit": "ms",+ "min": 13,+ "typ": 16,+ "max": 20,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET on-resistance",+ "symbol": "RDSON(HS)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 100,+ "max": 230,+ "conditions": "VIN = 12V, VBOOT-SW = 4.5V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown threshold",+ "symbol": "TJ(SD)",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 135,+ "max": 162,+ "conditions": "Temperature rising",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "VIN UVLO hysteresis",+ "symbol": "VINUVLO(H)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.35,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "ENA voltage rising threshold",+ "symbol": "VEN(R)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.3,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "ENA voltage falling threshold",+ "symbol": "VEN(F)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "ENA voltage hysteresis",+ "symbol": "VEN(H)",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 325,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side MOSFET on-resistance",+ "symbol": "RDSON(HS)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 125,+ "max": null,+ "conditions": "VIN = 5.5V, VBOOT-SW = 4.0V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown hysteresis",+ "symbol": "TJ(HYS)",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 14,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance (Custom Board)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 75,+ "max": null,+ "conditions": "Custom board",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance (JESD 51-7)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 106,+ "max": null,+ "conditions": "JESD 51-7, 4-layer JEDEC board",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (top) thermal resistance",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 54,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board thermal resistance",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 55,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-top characterization parameter",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board characterization parameter",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 56,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "sections": [