component

TN1625-600G-TR

Public Made by Adom

by adom

STMicroelectronics Thyristors (SCR)/Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorstn1625-600g-trfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
tn1625-600g-tr / README.md
History Download
Ray tn1625-600g-tr: specified limits as data (metadata.characteristics, 27 rows from the datasheet) 53c0993 19d ago

TN1625-600G-TR

STMicroelectronics · Thyristors (SCR)/Modules · D2PAK

TN1625-600G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode of the SCR, the left lead in the D2PAK drawing on page 1.
2 A passive Anode of the SCR, the middle lead, which is also connected to the tab.
3 G input Gate trigger input, the right lead, with IGT max 25 mA at VD = 12 V and peak reverse gate voltage VRGM of 5 V.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate trigger current IGT 2 25 mA VD = 12 V RL = 33 Ω 2
Gate trigger voltage VGT 1.3 V 2
Gate non-trigger voltage VGD 0.2 V VD = VDRM RL = 3.3 kΩ Tj = 125 °C 2
Holding current IH 40 mA IT = 500 mA Gate open 2
Latching current IL 60 mA IG = 1.2 x IGT 2
Critical rate of rise of off-state voltage dV/dt 500 V/µs VD = 67 % VDRM Gate open Tj = 125 °C 2
On-state voltage VTM 1.6 V ITM = 32 A tp = 380 µs Tj = 25 °C 2
Threshold voltage Vt0 0.77 V Tj = 125 °C 2
Dynamic resistance Rd 23 mΩ Tj = 125 °C 2
Repetitive peak off-state current IDRM 5 µA VDRM = VRRM Tj = 25 °C 2
Repetitive peak reverse current IRRM 5 µA VDRM = VRRM Tj = 25 °C 2
Repetitive peak off-state current IDRM 2 mA VDRM = VRRM Tj = 125 °C 2
Repetitive peak reverse current IRRM 2 mA VDRM = VRRM Tj = 125 °C 2
Repetitive peak off-state and reverse voltage (device rating, 600 V variant) VDRM/VRRM 600 V TN1625-600G 1
RMS on-state current IT(RMS) 16 A 180 °Conduction angle Tc = 110 °C 2
Average on-state current IT(AV) 10 A 180 °Conduction angle Tc = 110 °C 2
Non repetitive surge peak on-state current ITSM 200 A tp = 8.3 ms Tj = 25 °C 2
Non repetitive surge peak on-state current ITSM 190 A tp = 10 ms 2
I2t value for fusing I2t 180 A2S tp = 10 ms Tj = 25 °C 2
Critical rate of rise of on-state current dI/dt 50 A/µs IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C 2
Peak gate current IGM 4 A tp = 20 µs Tj = 125 °C 2
Average gate power dissipation PG(AV) 1 W Tj = 125 °C 2
Maximum peak reverse gate voltage VRGM 5 V 2
Storage junction temperature range Tstg -40 150 °C 2
Operating junction temperature range Tj -40 125 °C 2
Junction to case thermal resistance (DC) Rth(j-c) 1.1 °C/W DC 2
Junction to ambient thermal resistance (DC), D2PAK Rth(j-a) 45 °C/W S = 01 cm2 D2PAK 2

CAD (KiCad official)

  • Symbol: TN1625-600G-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: tn1625-600g-tr-etched.step / tn1625-600g-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tn1625-600g-tr.step / tn1625-600g-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (9 pp, sha256 5cd2592df8ccdbbc, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF