component
TN1625-600G-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tn1625-600g-tr: specified limits as data (metadata.characteristics, 27 rows from the datasheet)
2 files changed
+366−1
README.md+34@@ -21,6 +21,40 @@ TN1625-600G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate trigger current | IGT | 2 | | 25 | mA | VD = 12 V RL = 33 Ω | 2 |+| Gate trigger voltage | VGT | | | 1.3 | V | | 2 |+| Gate non-trigger voltage | VGD | 0.2 | | | V | VD = VDRM RL = 3.3 kΩ Tj = 125 °C | 2 |+| Holding current | IH | | | 40 | mA | IT = 500 mA Gate open | 2 |+| Latching current | IL | | | 60 | mA | IG = 1.2 x IGT | 2 |+| Critical rate of rise of off-state voltage | dV/dt | 500 | | | V/µs | VD = 67 % VDRM Gate open Tj = 125 °C | 2 |+| On-state voltage | VTM | | | 1.6 | V | ITM = 32 A tp = 380 µs Tj = 25 °C | 2 |+| Threshold voltage | Vt0 | | | 0.77 | V | Tj = 125 °C | 2 |+| Dynamic resistance | Rd | | | 23 | mΩ | Tj = 125 °C | 2 |+| Repetitive peak off-state current | IDRM | | | 5 | µA | VDRM = VRRM Tj = 25 °C | 2 |+| Repetitive peak reverse current | IRRM | | | 5 | µA | VDRM = VRRM Tj = 25 °C | 2 |+| Repetitive peak off-state current | IDRM | | | 2 | mA | VDRM = VRRM Tj = 125 °C | 2 |+| Repetitive peak reverse current | IRRM | | | 2 | mA | VDRM = VRRM Tj = 125 °C | 2 |+| Repetitive peak off-state and reverse voltage (device rating, 600 V variant) | VDRM/VRRM | | | 600 | V | TN1625-600G | 1 |+| RMS on-state current | IT(RMS) | | | 16 | A | 180 °Conduction angle Tc = 110 °C | 2 |+| Average on-state current | IT(AV) | | | 10 | A | 180 °Conduction angle Tc = 110 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 200 | A | tp = 8.3 ms Tj = 25 °C | 2 |+| Non repetitive surge peak on-state current | ITSM | | | 190 | A | tp = 10 ms | 2 |+| I2t value for fusing | I2t | | | 180 | A2S | tp = 10 ms Tj = 25 °C | 2 |+| Critical rate of rise of on-state current | dI/dt | | | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C | 2 |+| Peak gate current | IGM | | | 4 | A | tp = 20 µs Tj = 125 °C | 2 |+| Average gate power dissipation | PG(AV) | | | 1 | W | Tj = 125 °C | 2 |+| Maximum peak reverse gate voltage | VRGM | | | 5 | V | | 2 |+| Storage junction temperature range | Tstg | -40 | | 150 | °C | | 2 |+| Operating junction temperature range | Tj | -40 | | 125 | °C | | 2 |+| Junction to case thermal resistance (DC) | Rth(j-c) | | | 1.1 | °C/W | DC | 2 |+| Junction to ambient thermal resistance (DC), D2PAK | Rth(j-a) | | | 45 | °C/W | S = 01 cm2 D2PAK | 2 |+ ## CAD (KiCad official) - Symbol: `TN1625-600G-TR`
page.json+332−1@@ -151,6 +151,337 @@ "Package": "D2PAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5cd2592df8ccdbbc",+ "rows": [+ {+ "name": "Gate trigger current",+ "symbol": "IGT",+ "kind": "electrical",+ "unit": "mA",+ "min": 2,+ "typ": null,+ "max": 25,+ "conditions": "VD = 12 V RL = 33 Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate trigger voltage",+ "symbol": "VGT",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate non-trigger voltage",+ "symbol": "VGD",+ "kind": "electrical",+ "unit": "V",+ "min": 0.2,+ "typ": null,+ "max": null,+ "conditions": "VD = VDRM RL = 3.3 kΩ Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Holding current",+ "symbol": "IH",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "IT = 500 mA Gate open",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Latching current",+ "symbol": "IL",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "IG = 1.2 x IGT",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of off-state voltage",+ "symbol": "dV/dt",+ "kind": "electrical",+ "unit": "V/µs",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "VD = 67 % VDRM Gate open Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "On-state voltage",+ "symbol": "VTM",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ITM = 32 A tp = 380 µs Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Threshold voltage",+ "symbol": "Vt0",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 0.77,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Dynamic resistance",+ "symbol": "Rd",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 23,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak reverse current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDRM = VRRM Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state current",+ "symbol": "IDRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VDRM = VRRM Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak reverse current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "mA",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "VDRM = VRRM Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Repetitive peak off-state and reverse voltage (device rating, 600 V variant)",+ "symbol": "VDRM/VRRM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "TN1625-600G",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "RMS on-state current",+ "symbol": "IT(RMS)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "180 °Conduction angle Tc = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average on-state current",+ "symbol": "IT(AV)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "180 °Conduction angle Tc = 110 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "tp = 8.3 ms Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Non repetitive surge peak on-state current",+ "symbol": "ITSM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 190,+ "conditions": "tp = 10 ms",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "I2t value for fusing",+ "symbol": "I2t",+ "kind": "absolute_maximum",+ "unit": "A2S",+ "min": null,+ "typ": null,+ "max": 180,+ "conditions": "tp = 10 ms Tj = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Critical rate of rise of on-state current",+ "symbol": "dI/dt",+ "kind": "absolute_maximum",+ "unit": "A/µs",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak gate current",+ "symbol": "IGM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "tp = 20 µs Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Average gate power dissipation",+ "symbol": "PG(AV)",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "Tj = 125 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum peak reverse gate voltage",+ "symbol": "VRGM",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage junction temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 125,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to case thermal resistance (DC)",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "DC",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction to ambient thermal resistance (DC), D2PAK",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 45,+ "conditions": "S = 01 cm2 D2PAK",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +523,4 @@ "visibility": { "public": true }-}+}