component
TN1625-600G-TR
Public Made by Adomby adom
STMicroelectronics Thyristors (SCR)/Modules, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 24d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 18d ago |
| tn1625-600g-tr-etched.glb | 17d ago |
| tn1625-600g-tr-etched.step | 17d ago |
| tn1625-600g-tr-hero.glb | 17d ago |
| tn1625-600g-tr-hero.overlay.json | 17d ago |
| tn1625-600g-tr.glb | 24d ago |
| tn1625-600g-tr.kicad_mod | 24d ago |
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| tn1625-600g-tr.lbr | 24d ago |
| tn1625-600g-tr.step | 24d ago |
TN1625-600G-TR
STMicroelectronics · Thyristors (SCR)/Modules · D2PAK
TN1625-600G-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | K | passive | Cathode of the SCR, the left lead in the D2PAK drawing on page 1. |
| 2 | A | passive | Anode of the SCR, the middle lead, which is also connected to the tab. |
| 3 | G | input | Gate trigger input, the right lead, with IGT max 25 mA at VD = 12 V and peak reverse gate voltage VRGM of 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate trigger current | IGT | 2 | 25 | mA | VD = 12 V RL = 33 Ω | 2 | |
| Gate trigger voltage | VGT | 1.3 | V | 2 | |||
| Gate non-trigger voltage | VGD | 0.2 | V | VD = VDRM RL = 3.3 kΩ Tj = 125 °C | 2 | ||
| Holding current | IH | 40 | mA | IT = 500 mA Gate open | 2 | ||
| Latching current | IL | 60 | mA | IG = 1.2 x IGT | 2 | ||
| Critical rate of rise of off-state voltage | dV/dt | 500 | V/µs | VD = 67 % VDRM Gate open Tj = 125 °C | 2 | ||
| On-state voltage | VTM | 1.6 | V | ITM = 32 A tp = 380 µs Tj = 25 °C | 2 | ||
| Threshold voltage | Vt0 | 0.77 | V | Tj = 125 °C | 2 | ||
| Dynamic resistance | Rd | 23 | mΩ | Tj = 125 °C | 2 | ||
| Repetitive peak off-state current | IDRM | 5 | µA | VDRM = VRRM Tj = 25 °C | 2 | ||
| Repetitive peak reverse current | IRRM | 5 | µA | VDRM = VRRM Tj = 25 °C | 2 | ||
| Repetitive peak off-state current | IDRM | 2 | mA | VDRM = VRRM Tj = 125 °C | 2 | ||
| Repetitive peak reverse current | IRRM | 2 | mA | VDRM = VRRM Tj = 125 °C | 2 | ||
| Repetitive peak off-state and reverse voltage (device rating, 600 V variant) | VDRM/VRRM | 600 | V | TN1625-600G | 1 | ||
| RMS on-state current | IT(RMS) | 16 | A | 180 °Conduction angle Tc = 110 °C | 2 | ||
| Average on-state current | IT(AV) | 10 | A | 180 °Conduction angle Tc = 110 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 200 | A | tp = 8.3 ms Tj = 25 °C | 2 | ||
| Non repetitive surge peak on-state current | ITSM | 190 | A | tp = 10 ms | 2 | ||
| I2t value for fusing | I2t | 180 | A2S | tp = 10 ms Tj = 25 °C | 2 | ||
| Critical rate of rise of on-state current | dI/dt | 50 | A/µs | IG = 2 x IGT, tr ≤ 100 ns F = 60 Hz Tj = 125 °C | 2 | ||
| Peak gate current | IGM | 4 | A | tp = 20 µs Tj = 125 °C | 2 | ||
| Average gate power dissipation | PG(AV) | 1 | W | Tj = 125 °C | 2 | ||
| Maximum peak reverse gate voltage | VRGM | 5 | V | 2 | |||
| Storage junction temperature range | Tstg | -40 | 150 | °C | 2 | ||
| Operating junction temperature range | Tj | -40 | 125 | °C | 2 | ||
| Junction to case thermal resistance (DC) | Rth(j-c) | 1.1 | °C/W | DC | 2 | ||
| Junction to ambient thermal resistance (DC), D2PAK | Rth(j-a) | 45 | °C/W | S = 01 cm2 D2PAK | 2 |
CAD (KiCad official)
- Symbol:
TN1625-600G-TR - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
tn1625-600g-tr-etched.step/tn1625-600g-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tn1625-600g-tr.step/tn1625-600g-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (9 pp, sha256
5cd2592df8ccdbbc, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).