main
Ray stw68n60m6: specified limits as data (metadata.characteristics, 39 rows from the datasheet) a0d484a 17d ago
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  "type": "component",
  "slug": "stw68n60m6",
  "title": "STW68N60M6",
  "brief": "STMicroelectronics MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "STW68N60M6",
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    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
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      "digikey": "497-17554-ND",
      "mouser": "511-STW68N60M6"
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        "description": "Gate of the MDmesh M6 N-channel MOSFET; gate-source voltage is rated at ±25 V (absolute maximum, Table 1), and the part is Zener-protected."
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      {
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        "description": "Drain, also connected to the mounting tab (D(2, TAB)); continuous drain current is 63 A at TC = 25 °C and 40 A at TC = 100 °C, with a 600 V drain-source breakdown voltage."
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        "type": "passive",
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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      "Package": "TO-247-3",
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      "Pins": "3"
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    "characteristics": {
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          "name": "Gate-source voltage",
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          "name": "Peak diode recovery voltage slope",
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          "name": "MOSFET dv/dt ruggedness",
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          "conditions": "VDD ≤ 480 V",
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        {
          "name": "Storage temperature range",
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          "name": "Drain-source breakdown voltage",
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          "min": 600,
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        {
          "name": "Zero-gate voltage drain current",
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        {
          "name": "Zero-gate voltage drain current at TC = 125 °C",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
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          "max": 100,
          "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production)",
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        {
          "name": "Gate-body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
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          "min": -5,
          "typ": null,
          "max": 5,
          "conditions": "VDS = 0 V, VGS = ±25 V",
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        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
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          "min": 3.25,
          "typ": 4,
          "max": 4.75,
          "conditions": "VDS = VGS, ID = 250 µA",
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          "source": "datasheet"
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        {
          "name": "Static drain-source on-resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 35,
          "max": 41,
          "conditions": "VGS = 10 V, ID = 31.5 A",
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        {
          "name": "Input capacitance",
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          "kind": "electrical",
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          "min": null,
          "typ": 4360,
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        {
          "name": "Output capacitance",
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          "name": "Reverse transfer capacitance",
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          "name": "Equivalent output capacitance",
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          "name": "Intrinsic gate resistance",
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          "name": "Total gate charge",
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          "name": "Gate-source charge",
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          "name": "Turn-on delay time",
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          "conditions": "VDD = 300 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V",
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          "name": "Rise time",
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          "name": "Source-drain current (pulsed)",
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          "name": "Reverse recovery charge",
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          "name": "Reverse recovery time at Tj = 150 °C",
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          "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
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