component
STW68N60M6
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stw68n60m6: specified limits as data (metadata.characteristics, 39 rows from the datasheet)
2 files changed
+522−1
README.md+46@@ -21,6 +21,52 @@ STW68N60M6 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions e | Category | Triode/MOS Tube/Transistor | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -25 | | 25 | V | | 2 |+| Drain current (continuous) at TC = 25 °C | ID | | | 63 | A | TC = 25 °C | 2 |+| Drain current (continuous) at TC = 100 °C | ID | | | 40 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 252 | A | Pulse width limited by safe operating area | 2 |+| Total power dissipation at TC = 25 °C | PTOT | | | 390 | W | TC = 25 °C | 2 |+| Peak diode recovery voltage slope | dv/dt(2) | | | 15 | V/ns | ISD ≤ 63 A, di/dt ≤ 400 A/µs, VDD = 400 V | 2 |+| MOSFET dv/dt ruggedness | dv/dt(3) | | | 100 | V/ns | VDD ≤ 480 V | 2 |+| Storage temperature range | Tstg | -55 | | 150 | °C | | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS = 0 V, ID = 1 mA | 3 |+| Zero-gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |+| Zero-gate voltage drain current at TC = 125 °C | IDSS | | | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) | 3 |+| Gate-body leakage current | IGSS | -5 | | 5 | µA | VDS = 0 V, VGS = ±25 V | 3 |+| Gate threshold voltage | VGS(th) | 3.25 | 4 | 4.75 | V | VDS = VGS, ID = 250 µA | 3 |+| Static drain-source on-resistance | RDS(on) | | 35 | 41 | mΩ | VGS = 10 V, ID = 31.5 A | 3 |+| Input capacitance | Ciss | | 4360 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |+| Output capacitance | Coss | | 235 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |+| Reverse transfer capacitance | Crss | | 13 | | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |+| Equivalent output capacitance | Coss eq. | | 713 | | pF | VGS = 0 V, VDS = 0 to 480 V | 3 |+| Intrinsic gate resistance | Rg | | 1.6 | | Ω | f = 1 MHz open drain | 3 |+| Total gate charge | Qg | | 106 | | nC | VDD = 480 V, ID = 63 A, VGS = 0 to 10 V | 3 |+| Gate-source charge | Qgs | | 29 | | nC | | 3 |+| Gate-drain charge | Qgd | | 51 | | nC | | 3 |+| Turn-on delay time | td(on) | | 42 | | ns | VDD = 300 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V | 3 |+| Rise time | tr | | 28 | | ns | | 3 |+| Turn-off delay time | td(off) | | 130 | | ns | | 3 |+| Fall time | tf | | 8 | | ns | | 3 |+| Source-drain current | ISD | | 63 | | A | | 4 |+| Source-drain current (pulsed) | ISDM | | 252 | | A | | 4 |+| Forward on voltage | VSD | | 1.6 | | V | VGS = 0 V, ISD = 63 A | 4 |+| Reverse recovery time | trr | | 308 | | ns | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery charge | Qrr | | 4.3 | | µC | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery current | IRRM | | 26 | | A | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |+| Reverse recovery time at Tj = 150 °C | trr | | 504 | | ns | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |+| Reverse recovery charge at Tj = 150 °C | Qrr | | 10.8 | | µC | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |+| Reverse recovery current at Tj = 150 °C | IRRM | | 38 | | A | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |+| Thermal resistance, junction-to-case | RthJC | | | 0.32 | °C/W | | 2 |+| Thermal resistance, junction-to-ambient | RthJA | | | 50 | °C/W | | 2 |+| Avalanche current, repetitive or not repetitive | IAR | | | 7.5 | A | Pulse width limited by Tjmax | 2 |+| Single pulse avalanche energy | EAS | | | 1100 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |+ ## CAD (KiCad official) - Symbol: `STW68N60M6`
page.json+476−1@@ -150,6 +150,481 @@ "Package": "TO-247-3", "Category": "Triode/MOS Tube/Transistor", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5f89dd69a438cf5a",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 63,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 252,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 390,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt(2)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "ISD ≤ 63 A, di/dt ≤ 400 A/µs, VDD = 400 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt(3)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDD ≤ 480 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero-gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 600 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero-gate voltage drain current at TC = 125 °C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -5,+ "typ": null,+ "max": 5,+ "conditions": "VDS = 0 V, VGS = ±25 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3.25,+ "typ": 4,+ "max": 4.75,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 35,+ "max": 41,+ "conditions": "VGS = 10 V, ID = 31.5 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4360,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 100 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 235,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 100 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 13,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 100 V, f = 1 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Equivalent output capacitance",+ "symbol": "Coss eq.",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 713,+ "max": null,+ "conditions": "VGS = 0 V, VDS = 0 to 480 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Intrinsic gate resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.6,+ "max": null,+ "conditions": "f = 1 MHz open drain",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 106,+ "max": null,+ "conditions": "VDD = 480 V, ID = 63 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 29,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 51,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 42,+ "max": null,+ "conditions": "VDD = 300 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 28,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 130,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 8,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 63,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 252,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.6,+ "max": null,+ "conditions": "VGS = 0 V, ISD = 63 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 308,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 4.3,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 26,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time at Tj = 150 °C",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 504,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge at Tj = 150 °C",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 10.8,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current at Tj = 150 °C",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 38,+ "max": null,+ "conditions": "ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.32,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.5,+ "conditions": "Pulse width limited by Tjmax",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 1100,+ "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +666,4 @@ "visibility": { "public": true }-}+}