# STW68N60M6

**STMicroelectronics** · MOSFETs · TO-247-3

STW68N60M6 from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MDmesh M6 N-channel MOSFET; gate-source voltage is rated at ±25 V (absolute maximum, Table 1), and the part is Zener-protected. |
| 2 | D | passive | Drain, also connected to the mounting tab (D(2, TAB)); continuous drain current is 63 A at TC = 25 °C and 40 A at TC = 100 °C, with a 600 V drain-source breakdown voltage. |
| 3 | S | passive | Source of the MOSFET; source-drain diode continuous current is rated at 63 A (Table 7), with pulsed current limited to 252 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 2 |
| Drain current (continuous) at TC = 25 °C | ID |  |  | 63 | A | TC = 25 °C | 2 |
| Drain current (continuous) at TC = 100 °C | ID |  |  | 40 | A | TC = 100 °C | 2 |
| Drain current (pulsed) | IDM |  |  | 252 | A | Pulse width limited by safe operating area | 2 |
| Total power dissipation at TC = 25 °C | PTOT |  |  | 390 | W | TC = 25 °C | 2 |
| Peak diode recovery voltage slope | dv/dt(2) |  |  | 15 | V/ns | ISD ≤ 63 A, di/dt ≤ 400 A/µs, VDD = 400 V | 2 |
| MOSFET dv/dt ruggedness | dv/dt(3) |  |  | 100 | V/ns | VDD ≤ 480 V | 2 |
| Storage temperature range | Tstg | -55 |  | 150 | °C |  | 2 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS = 0 V, ID = 1 mA | 3 |
| Zero-gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 3 |
| Zero-gate voltage drain current at TC = 125 °C | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (specified by design, not tested in production) | 3 |
| Gate-body leakage current | IGSS | -5 |  | 5 | µA | VDS = 0 V, VGS = ±25 V | 3 |
| Gate threshold voltage | VGS(th) | 3.25 | 4 | 4.75 | V | VDS = VGS, ID = 250 µA | 3 |
| Static drain-source on-resistance | RDS(on) |  | 35 | 41 | mΩ | VGS = 10 V, ID = 31.5 A | 3 |
| Input capacitance | Ciss |  | 4360 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |
| Output capacitance | Coss |  | 235 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 13 |  | pF | VGS = 0 V, VDS = 100 V, f = 1 MHz | 3 |
| Equivalent output capacitance | Coss eq. |  | 713 |  | pF | VGS = 0 V, VDS = 0 to 480 V | 3 |
| Intrinsic gate resistance | Rg |  | 1.6 |  | Ω | f = 1 MHz open drain | 3 |
| Total gate charge | Qg |  | 106 |  | nC | VDD = 480 V, ID = 63 A, VGS = 0 to 10 V | 3 |
| Gate-source charge | Qgs |  | 29 |  | nC |  | 3 |
| Gate-drain charge | Qgd |  | 51 |  | nC |  | 3 |
| Turn-on delay time | td(on) |  | 42 |  | ns | VDD = 300 V, ID = 30 A, RG = 4.7 Ω, VGS = 10 V | 3 |
| Rise time | tr |  | 28 |  | ns |  | 3 |
| Turn-off delay time | td(off) |  | 130 |  | ns |  | 3 |
| Fall time | tf |  | 8 |  | ns |  | 3 |
| Source-drain current | ISD |  | 63 |  | A |  | 4 |
| Source-drain current (pulsed) | ISDM |  | 252 |  | A |  | 4 |
| Forward on voltage | VSD |  | 1.6 |  | V | VGS = 0 V, ISD = 63 A | 4 |
| Reverse recovery time | trr |  | 308 |  | ns | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery charge | Qrr |  | 4.3 |  | µC | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery current | IRRM |  | 26 |  | A | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V | 4 |
| Reverse recovery time at Tj = 150 °C | trr |  | 504 |  | ns | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery charge at Tj = 150 °C | Qrr |  | 10.8 |  | µC | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Reverse recovery current at Tj = 150 °C | IRRM |  | 38 |  | A | ISD = 63 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 4 |
| Thermal resistance, junction-to-case | RthJC |  |  | 0.32 | °C/W |  | 2 |
| Thermal resistance, junction-to-ambient | RthJA |  |  | 50 | °C/W |  | 2 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 7.5 | A | Pulse width limited by Tjmax | 2 |
| Single pulse avalanche energy | EAS |  |  | 1100 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |

## CAD (KiCad official)

- Symbol: `STW68N60M6`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `stw68n60m6-etched.step` / `stw68n60m6-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stw68n60m6.step` / `stw68n60m6.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stw68n60m6.pdf) (12 pp, sha256 `5f89dd69a438cf5a`, retrieved 2026-10-12, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stw68n60m6-datasheet.pdf)