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STPSC10065G2-TR

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STMicroelectronics SiC Diodes, D2PAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.

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STPSC10065G2-TR

STMicroelectronics · SiC Diodes · D2PAK

STPSC10065G2-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 A passive Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 3.
2 NC unconnected No connection; the center lead is shortened and not connected, which helps the 5.38 mm minimum anode-to-cathode creepage distance.
3 A passive Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 1.
TAB K passive Cathode, connected to the exposed tab (marked K on the package drawing), with a 650 V maximum repetitive peak reverse voltage.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Silicon Carbide (SiC) Devices
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak reverse voltage VRRM 650 V 2
Forward rms current IF(RMS) 22 A 2
Average forward current IF(AV) 10 A TC = 150 °C, DC current 2
Repetitive peak forward current IFRM 42 A Tc = 150 °C, Tj = 175 °C, δ = 0.1 2
Surge non repetitive forward current IFSM 48 A tp = 10 ms sinusoidal, Tc = 25 °C 2
Surge non repetitive forward current IFSM 39 A tp = 10 ms sinusoidal, Tc = 125 °C 2
Surge non repetitive forward current IFSM 210 A tp = 10 µs square, Tc = 25 °C 2
Storage temperature range Tstg -65 175 °C 2
Operating junction temperature Tj -40 175 °C 2
Junction to case thermal resistance Rth(j-c) 1 1.5 °C/W 2
Reverse leakage current IR 7 130 µA Tj = 25 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% 2
Reverse leakage current IR 53 900 µA Tj = 150 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% 2
Forward voltage drop VF 1.3 1.45 V Tj = 25 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% 2
Forward voltage drop VF 1.45 1.65 V Tj = 150 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% 2
Forward voltage drop VF 1.5 V Tj = 175 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% 2

CAD (KiCad official)

  • Symbol: STPSC10065G2-TR
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stpsc10065g2-tr-etched.step / stpsc10065g2-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stpsc10065g2-tr.step / stpsc10065g2-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 a1007db746223153, retrieved 2026-10-21, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF