component
STPSC10065G2-TR
Public Made by Adomby adom
STMicroelectronics SiC Diodes, D2PAK. Pinout reviewed by a person against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTPSC10065G2-TR
STMicroelectronics · SiC Diodes · D2PAK
STPSC10065G2-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | A | passive | Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 3. |
| 2 | NC | unconnected | No connection; the center lead is shortened and not connected, which helps the 5.38 mm minimum anode-to-cathode creepage distance. |
| 3 | A | passive | Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 1. |
| TAB | K | passive | Cathode, connected to the exposed tab (marked K on the package drawing), with a 650 V maximum repetitive peak reverse voltage. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Repetitive peak reverse voltage | VRRM | 650 | V | 2 | |||
| Forward rms current | IF(RMS) | 22 | A | 2 | |||
| Average forward current | IF(AV) | 10 | A | TC = 150 °C, DC current | 2 | ||
| Repetitive peak forward current | IFRM | 42 | A | Tc = 150 °C, Tj = 175 °C, δ = 0.1 | 2 | ||
| Surge non repetitive forward current | IFSM | 48 | A | tp = 10 ms sinusoidal, Tc = 25 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 39 | A | tp = 10 ms sinusoidal, Tc = 125 °C | 2 | ||
| Surge non repetitive forward current | IFSM | 210 | A | tp = 10 µs square, Tc = 25 °C | 2 | ||
| Storage temperature range | Tstg | -65 | 175 | °C | 2 | ||
| Operating junction temperature | Tj | -40 | 175 | °C | 2 | ||
| Junction to case thermal resistance | Rth(j-c) | 1 | 1.5 | °C/W | 2 | ||
| Reverse leakage current | IR | 7 | 130 | µA | Tj = 25 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% | 2 | |
| Reverse leakage current | IR | 53 | 900 | µA | Tj = 150 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2% | 2 | |
| Forward voltage drop | VF | 1.3 | 1.45 | V | Tj = 25 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 1.45 | 1.65 | V | Tj = 150 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% | 2 | |
| Forward voltage drop | VF | 1.5 | V | Tj = 175 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2% | 2 |
CAD (KiCad official)
- Symbol:
STPSC10065G2-TR - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files:
stpsc10065g2-tr-etched.step/stpsc10065g2-tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stpsc10065g2-tr.step/stpsc10065g2-tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (13 pp, sha256
a1007db746223153, retrieved 2026-10-21, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).