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STPSC10065G2-TR

STMicroelectronics · SiC Diodes · D2PAK

STPSC10065G2-TR from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	A	passive	Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 3.
2	NC	unconnected	No connection; the center lead is shortened and not connected, which helps the 5.38 mm minimum anode-to-cathode creepage distance.
3	A	passive	Anode of the 650 V, 10 A SiC Schottky diode, connected internally to the same anode as pin 1.
TAB	K	passive	Cathode, connected to the exposed tab (marked K on the package drawing), with a 650 V maximum repetitive peak reverse voltage.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	D2PAK
Category	Silicon Carbide (SiC) Devices
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Repetitive peak reverse voltage	VRRM			650	V		2
Forward rms current	IF(RMS)			22	A		2
Average forward current	IF(AV)			10	A	TC = 150 °C, DC current	2
Repetitive peak forward current	IFRM			42	A	Tc = 150 °C, Tj = 175 °C, δ = 0.1	2
Surge non repetitive forward current	IFSM			48	A	tp = 10 ms sinusoidal, Tc = 25 °C	2
Surge non repetitive forward current	IFSM			39	A	tp = 10 ms sinusoidal, Tc = 125 °C	2
Surge non repetitive forward current	IFSM			210	A	tp = 10 µs square, Tc = 25 °C	2
Storage temperature range	Tstg	-65		175	°C		2
Operating junction temperature	Tj	-40		175	°C		2
Junction to case thermal resistance	Rth(j-c)		1	1.5	°C/W		2
Reverse leakage current	IR		7	130	µA	Tj = 25 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2%	2
Reverse leakage current	IR		53	900	µA	Tj = 150 °C, VR = VRRM; pulse test tp = 5 ms, δ < 2%	2
Forward voltage drop	VF		1.3	1.45	V	Tj = 25 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2%	2
Forward voltage drop	VF		1.45	1.65	V	Tj = 150 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2%	2
Forward voltage drop	VF		1.5		V	Tj = 175 °C, IF = 10 A; pulse test tp = 500 µs, δ < 2%	2

CAD (KiCad official)

Symbol: STPSC10065G2-TR
Footprint: Package_TO_SOT_SMD:TO-263-2
3D model: D2PAK (KiCad packages3D, STEP)
3D model files: stpsc10065g2-tr-etched.step / stpsc10065g2-tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stpsc10065g2-tr.step / stpsc10065g2-tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (13 pp, sha256 a1007db746223153, retrieved 2026-10-21, tier: lcsc)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF