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Ray stp5nk50z: specified limits as data (metadata.characteristics, 21 rows from the datasheet) 44b18c8 17d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "stp5nk50z",
  "title": "STP5NK50Z",
  "brief": "STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
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    "extractor-text"
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  "component": {
    "mpn": "STP5NK50Z",
    "manufacturer": "STMicroelectronics",
    "package": "TO-220",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.st.com/resource/en/datasheet/stp5nk50z.pdf",
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    "distributor_links": {
      "lcsc": "C60611",
      "digikey": "497-3195-5-ND",
      "mouser": "511-STP5NK50Z"
    },
    "distributor_check": {
      "checked_at": "2026-10-11T23:02:59Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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        "status": "found",
        "lifecycle": "Active"
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        "pn": "511-STP5NK50Z",
        "status": "found"
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the Zener-protected N-channel MOSFET; gate-source voltage is limited to ±30 V (absolute maximum, Table 1)."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, also connected to the mounting tab; drain-source voltage is 500 V and continuous drain current is 4.4 A at TC = 25 °C (Table 1)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the MOSFET; source-drain diode forward current is rated 4.4 A continuous and 17.6 A pulsed (Table 7)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The datasheet has no dedicated TO-220 pin table. The pinout comes from the pin-label drawing on page; The tab is labeled as drain (D(2, TAB)) but is not given its own pin number in the datasheet, so no ; The datasheet gives no per-pin functional description. Pin descriptions are limited to the device ra"
        ],
        "pages_sent": 29,
        "cost_usd": 0.0511,
        "at": "2026-10-11T23:02:44"
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        "url": "https://www.st.com/resource/en/datasheet/stp5nk50z.pdf",
        "pages": 29,
        "sha256": "646ad0478bceba64",
        "source_tier": "mfr"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
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    "models_3d": [
      {
        "file": "stp5nk50z.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
          10.25,
          4.455,
          28.525
        ],
        "zmin_mm": -9.75,
        "centre_offset_mm": 0.932,
        "footprint_binding": "identity",
        "sha256": "7cb065d935df5771f0ba6e48ddd180863a121af76483dad7f18e667a7b68204a",
        "checked": "2026-10-11",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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        "sha256": "56197b0747f8adc6bf62fe3d348be1e955c26437097a0d449be7964b18adab63",
        "checked": "2026-10-11",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "646ad0478bceba64",
      "rows": [
        {
          "name": "Drain-source voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 500,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 25 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.4,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (continuous) at TC = 100 °C",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 2.7,
          "conditions": "TC = 100 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 17.6,
          "conditions": "Pulse width limited by safe operating area",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Total dissipation at TC = 25 °C",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 70,
          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-source ESD human body model",
          "symbol": "ESD",
          "kind": "absolute_maximum",
          "unit": "kV",
          "min": null,
          "typ": null,
          "max": 3,
          "conditions": "R = 1.5 kΩ, C = 100 pF",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4.5,
          "conditions": "ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature range",
          "symbol": "Tj",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche current, repetitive or not-repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.4,
          "conditions": "Pulse width limited by Tj max",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 130,
          "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 500,
          "typ": null,
          "max": null,
          "conditions": "ID = 1 mA, VGS = 0 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0 V, VDS = 500 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current (TC = 125 °C)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VGS = 0 V, VDS = 500 V, TC = 125 °C (defined by design, not production tested)",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "µA",
          "min": -10,
          "typ": null,
          "max": 10,
          "conditions": "VDS = 0 V, VGS = ±20 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 3,
          "typ": 3.75,
          "max": 4.5,
          "conditions": "VDS = VGS, ID = 50 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static drain-source on resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 1.22,
          "max": 1.5,
          "conditions": "VGS = 10 V, ID = 2.2 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Total gate charge",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 20,
          "max": 28,
          "conditions": "VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-source breakdown voltage",
          "symbol": "V(BR)GSO",
          "kind": "electrical",
          "unit": "V",
          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "IGS = ±1 mA, ID = 0 A",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Junction-case thermal resistance",
          "symbol": "Rthj-case",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 1.78,
          "max": null,
          "conditions": "TO-220 column of Table 2 (single printed value)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Junction-ambient thermal resistance",
          "symbol": "Rthj-amb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 62.5,
          "max": null,
          "conditions": "TO-220 column of Table 2 (no test conditions printed)",
          "source_page": 2,
          "source": "datasheet"
        }
      ]
    }
  },
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  "discovery_triggers": [
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  "discovery_pitch": "STP5NK50Z (STMicroelectronics) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
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