component
STP5NK50Z
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 21d ago |
| viewers | 21d ago |
| package.json | 21d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| stp5nk50z-etched.glb | 21d ago |
| stp5nk50z-etched.step | 21d ago |
| stp5nk50z-hero.glb | 21d ago |
| stp5nk50z-hero.overlay.json | 21d ago |
| stp5nk50z.glb | 21d ago |
| stp5nk50z.kicad_mod | 21d ago |
| stp5nk50z.kicad_sym | 21d ago |
| stp5nk50z.lbr | 21d ago |
| stp5nk50z.step | 21d ago |
STP5NK50Z
STMicroelectronics · MOSFETs · TO-220
STP5NK50Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the Zener-protected N-channel MOSFET; gate-source voltage is limited to ±30 V (absolute maximum, Table 1). |
| 2 | D | passive | Drain of the MOSFET, also connected to the mounting tab; drain-source voltage is 500 V and continuous drain current is 4.4 A at TC = 25 °C (Table 1). |
| 3 | S | passive | Source of the MOSFET; source-drain diode forward current is rated 4.4 A continuous and 17.6 A pulsed (Table 7). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 500 | V | 2 | |||
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) at TC = 25 °C | ID | 4.4 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) at TC = 100 °C | ID | 2.7 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 17.6 | A | Pulse width limited by safe operating area | 2 | ||
| Total dissipation at TC = 25 °C | PTOT | 70 | W | TC = 25 °C | 2 | ||
| Gate-source ESD human body model | ESD | 3 | kV | R = 1.5 kΩ, C = 100 pF | 2 | ||
| Peak diode recovery voltage slope | dv/dt | 4.5 | V/ns | ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS | 2 | ||
| Operating junction temperature range | Tj | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not-repetitive | IAR | 4.4 | A | Pulse width limited by Tj max | 2 | ||
| Single pulse avalanche energy | EAS | 130 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Drain-source breakdown voltage | V(BR)DSS | 500 | V | ID = 1 mA, VGS = 0 V | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 500 V | 3 | ||
| Zero gate voltage drain current (TC = 125 °C) | IDSS | 50 | µA | VGS = 0 V, VDS = 500 V, TC = 125 °C (defined by design, not production tested) | 3 | ||
| Gate body leakage current | IGSS | -10 | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 50 µA | 3 |
| Static drain-source on resistance | RDS(on) | 1.22 | 1.5 | Ω | VGS = 10 V, ID = 2.2 A | 3 | |
| Total gate charge | Qg | 20 | 28 | nC | VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V | 3 | |
| Gate-source breakdown voltage | V(BR)GSO | 30 | V | IGS = ±1 mA, ID = 0 A | 4 | ||
| Junction-case thermal resistance | Rthj-case | 1.78 | °C/W | TO-220 column of Table 2 (single printed value) | 2 | ||
| Junction-ambient thermal resistance | Rthj-amb | 62.5 | °C/W | TO-220 column of Table 2 (no test conditions printed) | 2 |
CAD (KiCad official)
- Symbol:
STP5NK50Z - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp5nk50z-etched.step/stp5nk50z-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp5nk50z.step/stp5nk50z.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (29 pp, sha256
646ad0478bceba64, retrieved 2026-10-11, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).