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Ray stp5nk50z: specified limits as data (metadata.characteristics, 21 rows from the datasheet) 44b18c8 17d ago

STP5NK50Z

STMicroelectronics · MOSFETs · TO-220

STP5NK50Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the Zener-protected N-channel MOSFET; gate-source voltage is limited to ±30 V (absolute maximum, Table 1).
2 D passive Drain of the MOSFET, also connected to the mounting tab; drain-source voltage is 500 V and continuous drain current is 4.4 A at TC = 25 °C (Table 1).
3 S passive Source of the MOSFET; source-drain diode forward current is rated 4.4 A continuous and 17.6 A pulsed (Table 7).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 500 V 2
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) at TC = 25 °C ID 4.4 A TC = 25 °C 2
Drain current (continuous) at TC = 100 °C ID 2.7 A TC = 100 °C 2
Drain current (pulsed) IDM 17.6 A Pulse width limited by safe operating area 2
Total dissipation at TC = 25 °C PTOT 70 W TC = 25 °C 2
Gate-source ESD human body model ESD 3 kV R = 1.5 kΩ, C = 100 pF 2
Peak diode recovery voltage slope dv/dt 4.5 V/ns ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS 2
Operating junction temperature range Tj -55 150 °C 2
Avalanche current, repetitive or not-repetitive IAR 4.4 A Pulse width limited by Tj max 2
Single pulse avalanche energy EAS 130 mJ Starting Tj = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 500 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 500 V 3
Zero gate voltage drain current (TC = 125 °C) IDSS 50 µA VGS = 0 V, VDS = 500 V, TC = 125 °C (defined by design, not production tested) 3
Gate body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 3
Gate threshold voltage VGS(th) 3 3.75 4.5 V VDS = VGS, ID = 50 µA 3
Static drain-source on resistance RDS(on) 1.22 1.5 Ω VGS = 10 V, ID = 2.2 A 3
Total gate charge Qg 20 28 nC VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V 3
Gate-source breakdown voltage V(BR)GSO 30 V IGS = ±1 mA, ID = 0 A 4
Junction-case thermal resistance Rthj-case 1.78 °C/W TO-220 column of Table 2 (single printed value) 2
Junction-ambient thermal resistance Rthj-amb 62.5 °C/W TO-220 column of Table 2 (no test conditions printed) 2

CAD (KiCad official)

  • Symbol: STP5NK50Z
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp5nk50z-etched.step / stp5nk50z-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp5nk50z.step / stp5nk50z.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (29 pp, sha256 646ad0478bceba64, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF