component
STP5NK50Z
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp5nk50z: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
2 files changed
+288−1
README.md+28@@ -21,6 +21,34 @@ STP5NK50Z from STMicroelectronics, in a TO-220. Pinout and pin descriptions extr | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 500 | V | | 2 |+| Gate-source voltage | VGS | -30 | | 30 | V | | 2 |+| Drain current (continuous) at TC = 25 °C | ID | | | 4.4 | A | TC = 25 °C | 2 |+| Drain current (continuous) at TC = 100 °C | ID | | | 2.7 | A | TC = 100 °C | 2 |+| Drain current (pulsed) | IDM | | | 17.6 | A | Pulse width limited by safe operating area | 2 |+| Total dissipation at TC = 25 °C | PTOT | | | 70 | W | TC = 25 °C | 2 |+| Gate-source ESD human body model | ESD | | | 3 | kV | R = 1.5 kΩ, C = 100 pF | 2 |+| Peak diode recovery voltage slope | dv/dt | | | 4.5 | V/ns | ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS | 2 |+| Operating junction temperature range | Tj | -55 | | 150 | °C | | 2 |+| Avalanche current, repetitive or not-repetitive | IAR | | | 4.4 | A | Pulse width limited by Tj max | 2 |+| Single pulse avalanche energy | EAS | | | 130 | mJ | Starting Tj = 25 °C, ID = IAR, VDD = 50 V | 2 |+| Drain-source breakdown voltage | V(BR)DSS | 500 | | | V | ID = 1 mA, VGS = 0 V | 3 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 500 V | 3 |+| Zero gate voltage drain current (TC = 125 °C) | IDSS | | | 50 | µA | VGS = 0 V, VDS = 500 V, TC = 125 °C (defined by design, not production tested) | 3 |+| Gate body leakage current | IGSS | -10 | | 10 | µA | VDS = 0 V, VGS = ±20 V | 3 |+| Gate threshold voltage | VGS(th) | 3 | 3.75 | 4.5 | V | VDS = VGS, ID = 50 µA | 3 |+| Static drain-source on resistance | RDS(on) | | 1.22 | 1.5 | Ω | VGS = 10 V, ID = 2.2 A | 3 |+| Total gate charge | Qg | | 20 | 28 | nC | VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V | 3 |+| Gate-source breakdown voltage | V(BR)GSO | 30 | | | V | IGS = ±1 mA, ID = 0 A | 4 |+| Junction-case thermal resistance | Rthj-case | | 1.78 | | °C/W | TO-220 column of Table 2 (single printed value) | 2 |+| Junction-ambient thermal resistance | Rthj-amb | | 62.5 | | °C/W | TO-220 column of Table 2 (no test conditions printed) | 2 |+ ## CAD (KiCad official) - Symbol: `STP5NK50Z`
page.json+260−1@@ -150,6 +150,265 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "646ad0478bceba64",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 25 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous) at TC = 100 °C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.7,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 17.6,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source ESD human body model",+ "symbol": "ESD",+ "kind": "absolute_maximum",+ "unit": "kV",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "R = 1.5 kΩ, C = 100 pF",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 4.5,+ "conditions": "ISD ≤ 4.4 A, di/dt ≤ 200 A/μs, VDD ≤ V(BR)DSS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not-repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4.4,+ "conditions": "Pulse width limited by Tj max",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 130,+ "conditions": "Starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 500,+ "typ": null,+ "max": null,+ "conditions": "ID = 1 mA, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 500 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 500 V, TC = 125 °C (defined by design, not production tested)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0 V, VGS = ±20 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3,+ "typ": 3.75,+ "max": 4.5,+ "conditions": "VDS = VGS, ID = 50 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.22,+ "max": 1.5,+ "conditions": "VGS = 10 V, ID = 2.2 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 20,+ "max": 28,+ "conditions": "VDD = 400 V, ID = 4.4 A, VGS = 0 to 10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source breakdown voltage",+ "symbol": "V(BR)GSO",+ "kind": "electrical",+ "unit": "V",+ "min": 30,+ "typ": null,+ "max": null,+ "conditions": "IGS = ±1 mA, ID = 0 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-case thermal resistance",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.78,+ "max": null,+ "conditions": "TO-220 column of Table 2 (single printed value)",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Junction-ambient thermal resistance",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 62.5,+ "max": null,+ "conditions": "TO-220 column of Table 2 (no test conditions printed)",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +450,4 @@ "visibility": { "public": true }-}+}