# STP15N60M2-EP

**STMicroelectronics** · MOSFETs · TO-220

STP15N60M2-EP from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±25 V (VGS). |
| 2 | D | passive | Drain terminal, also connected to the metal tab; rated 600 V VDS with continuous drain current of 11 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; source-drain diode current is rated 11 A continuous and 44 A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-source voltage | VGS | -25 |  | 25 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 11 | A | TC = 25 °C | 3 |
| Drain current (continuous) | ID |  |  | 7 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM |  |  | 44 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 110 | W | TC = 25 °C | 3 |
| Peak diode recovery voltage slope | dv/dt(2) |  |  | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V | 3 |
| MOSFET dv/dt ruggedness | dv/dt(3) |  |  | 50 | V/ns | VDS ≤ 480 V | 3 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 1.14 | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 3 |
| Avalanche current, repetitive or not repetitive | IAR |  |  | 2.8 | A | Pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS |  |  | 125 | mJ | Starting Tj = 25 °C, ID = IAR; VDD = 50 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | VGS = 0 V, ID = 1 mA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VGS = 0 V, VDS = 600 V | 4 |
| Zero gate voltage drain current | IDSS |  |  | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 4 |
| Gate-body leakage current | IGSS | -10 |  | 10 | µA | VDS = 0 V, VGS = ±25 V | 4 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) |  | 0.34 | 0.378 | Ω | VGS = 10 V, ID = 5.5 A | 4 |
| Source-drain current | ISD |  |  | 11 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 44 | A | Pulse width is limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.6 | V | VGS = 0 V, ISD = 11 A | 5 |
| Input capacitance | Ciss |  | 590 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |
| Output capacitance | Coss |  | 30 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |
| Reverse transfer capacitance | Crss |  | 1.1 |  | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |
| Equivalent output capacitance | Coss eq. |  | 148 |  | pF | VDS = 0 to 480 V, VGS = 0 V | 4 |
| Intrinsic gate resistance | RG |  | 7 |  | Ω | f = 1 MHz, ID = 0 A | 4 |
| Total gate charge | Qg |  | 17 |  | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |
| Gate-source charge | Qgs |  | 3.1 |  | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |
| Gate-drain charge | Qgd |  | 7.3 |  | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |
| Turn-off energy | E(off) |  | 4.7 |  | µJ | VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Turn-off energy | E(off) |  | 5.2 |  | µJ | VDD = 400 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |
| Turn-on delay time | td(on) |  | 11 |  | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |
| Rise time | tr |  | 10 |  | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |
| Turn-off delay time | td(off) |  | 40 |  | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |
| Fall time | tf |  | 15 |  | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |
| Reverse recovery time | trr |  | 280 |  | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |
| Reverse recovery charge | Qrr |  | 2.7 |  | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |
| Reverse recovery current | IRRM |  | 19.5 |  | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |
| Reverse recovery time | trr |  | 400 |  | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |
| Reverse recovery charge | Qrr |  | 3.8 |  | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |
| Reverse recovery current | IRRM |  | 19 |  | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |

## CAD (KiCad official)

- Symbol: `STP15N60M2-EP`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `stp15n60m2-ep-etched.step` / `stp15n60m2-ep-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stp15n60m2-ep.step` / `stp15n60m2-ep.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603078752964526080) (14 pp, sha256 `28c58471c655050c`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stp15n60m2-ep-datasheet.pdf)