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STP15N60M2-EP

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STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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package.json Publish 0.1.0 · Ray 23d ago
page.json stp15n60m2-ep: specified limits as data (metadata.characteristics, 41 rows from the datasheet) · Ray 17d ago
README.md stp15n60m2-ep: specified limits as data (metadata.characteristics, 41 rows from the datasheet) · Ray 17d ago
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stp15n60m2-ep-etched.step stp15n60m2-ep: factory component page (tier=lcsc) · Ray 23d ago
stp15n60m2-ep-hero.glb stp15n60m2-ep: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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STP15N60M2-EP

STMicroelectronics · MOSFETs · TO-220

STP15N60M2-EP from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the MOSFET; the gate-source voltage is rated at ±25 V (VGS).
2 D passive Drain terminal, also connected to the metal tab; rated 600 V VDS with continuous drain current of 11 A at TC = 25 °C.
3 S passive Source terminal; source-drain diode current is rated 11 A continuous and 44 A pulsed.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGS -25 25 V 3
Drain current (continuous) ID 11 A TC = 25 °C 3
Drain current (continuous) ID 7 A TC = 100 °C 3
Drain current (pulsed) IDM 44 A Pulse width limited by safe operating area 3
Total dissipation PTOT 110 W TC = 25 °C 3
Peak diode recovery voltage slope dv/dt(2) 15 V/ns ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V 3
MOSFET dv/dt ruggedness dv/dt(3) 50 V/ns VDS ≤ 480 V 3
Storage temperature Tstg -55 150 °C 3
Thermal resistance junction-case Rthj-case 1.14 °C/W 3
Thermal resistance junction-ambient Rthj-amb 62.5 °C/W 3
Avalanche current, repetitive or not repetitive IAR 2.8 A Pulse width limited by Tjmax 3
Single pulse avalanche energy EAS 125 mJ Starting Tj = 25 °C, ID = IAR; VDD = 50 V 3
Drain-source breakdown voltage V(BR)DSS 600 V VGS = 0 V, ID = 1 mA 4
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 4
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 600 V, TC = 125 °C 4
Gate-body leakage current IGSS -10 10 µA VDS = 0 V, VGS = ±25 V 4
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 4
Static drain-source on-resistance RDS(on) 0.34 0.378 Ω VGS = 10 V, ID = 5.5 A 4
Source-drain current ISD 11 A 5
Source-drain current (pulsed) ISDM 44 A Pulse width is limited by safe operating area 5
Forward on voltage VSD 1.6 V VGS = 0 V, ISD = 11 A 5
Input capacitance Ciss 590 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 4
Output capacitance Coss 30 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 4
Reverse transfer capacitance Crss 1.1 pF VDS = 100 V, f = 1 MHz, VGS = 0 V 4
Equivalent output capacitance Coss eq. 148 pF VDS = 0 to 480 V, VGS = 0 V 4
Intrinsic gate resistance RG 7 Ω f = 1 MHz, ID = 0 A 4
Total gate charge Qg 17 nC VDD = 480 V, ID = 11 A, VGS = 10 V 4
Gate-source charge Qgs 3.1 nC VDD = 480 V, ID = 11 A, VGS = 10 V 4
Gate-drain charge Qgd 7.3 nC VDD = 480 V, ID = 11 A, VGS = 10 V 4
Turn-off energy E(off) 4.7 µJ VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V 4
Turn-off energy E(off) 5.2 µJ VDD = 400 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V 4
Turn-on delay time td(on) 11 ns VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V 5
Rise time tr 10 ns VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V 5
Turn-off delay time td(off) 40 ns VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V 5
Fall time tf 15 ns VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V 5
Reverse recovery time trr 280 ns ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery charge Qrr 2.7 µC ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery current IRRM 19.5 A ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V 5
Reverse recovery time trr 400 ns ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5
Reverse recovery charge Qrr 3.8 µC ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5
Reverse recovery current IRRM 19 A ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C 5

CAD (KiCad official)

  • Symbol: STP15N60M2-EP
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp15n60m2-ep-etched.step / stp15n60m2-ep-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp15n60m2-ep.step / stp15n60m2-ep.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 28c58471c655050c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF