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STP15N60M2-EP
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stp15n60m2-ep: specified limits as data (metadata.characteristics, 41 rows from the datasheet)
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+548−1
README.md+48@@ -21,6 +21,54 @@ STP15N60M2-EP from STMicroelectronics, in a TO-220. Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-source voltage | VGS | -25 | | 25 | V | | 3 |+| Drain current (continuous) | ID | | | 11 | A | TC = 25 °C | 3 |+| Drain current (continuous) | ID | | | 7 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 44 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 110 | W | TC = 25 °C | 3 |+| Peak diode recovery voltage slope | dv/dt(2) | | | 15 | V/ns | ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V | 3 |+| MOSFET dv/dt ruggedness | dv/dt(3) | | | 50 | V/ns | VDS ≤ 480 V | 3 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 3 |+| Thermal resistance junction-case | Rthj-case | | | 1.14 | °C/W | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 62.5 | °C/W | | 3 |+| Avalanche current, repetitive or not repetitive | IAR | | | 2.8 | A | Pulse width limited by Tjmax | 3 |+| Single pulse avalanche energy | EAS | | | 125 | mJ | Starting Tj = 25 °C, ID = IAR; VDD = 50 V | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS = 0 V, ID = 1 mA | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 600 V | 4 |+| Zero gate voltage drain current | IDSS | | | 100 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C | 4 |+| Gate-body leakage current | IGSS | -10 | | 10 | µA | VDS = 0 V, VGS = ±25 V | 4 |+| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 0.34 | 0.378 | Ω | VGS = 10 V, ID = 5.5 A | 4 |+| Source-drain current | ISD | | | 11 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 44 | A | Pulse width is limited by safe operating area | 5 |+| Forward on voltage | VSD | | | 1.6 | V | VGS = 0 V, ISD = 11 A | 5 |+| Input capacitance | Ciss | | 590 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |+| Output capacitance | Coss | | 30 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |+| Reverse transfer capacitance | Crss | | 1.1 | | pF | VDS = 100 V, f = 1 MHz, VGS = 0 V | 4 |+| Equivalent output capacitance | Coss eq. | | 148 | | pF | VDS = 0 to 480 V, VGS = 0 V | 4 |+| Intrinsic gate resistance | RG | | 7 | | Ω | f = 1 MHz, ID = 0 A | 4 |+| Total gate charge | Qg | | 17 | | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |+| Gate-source charge | Qgs | | 3.1 | | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |+| Gate-drain charge | Qgd | | 7.3 | | nC | VDD = 480 V, ID = 11 A, VGS = 10 V | 4 |+| Turn-off energy | E(off) | | 4.7 | | µJ | VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Turn-off energy | E(off) | | 5.2 | | µJ | VDD = 400 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V | 4 |+| Turn-on delay time | td(on) | | 11 | | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |+| Rise time | tr | | 10 | | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |+| Turn-off delay time | td(off) | | 40 | | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |+| Fall time | tf | | 15 | | ns | VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V | 5 |+| Reverse recovery time | trr | | 280 | | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |+| Reverse recovery charge | Qrr | | 2.7 | | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |+| Reverse recovery current | IRRM | | 19.5 | | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V | 5 |+| Reverse recovery time | trr | | 400 | | ns | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |+| Reverse recovery charge | Qrr | | 3.8 | | µC | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |+| Reverse recovery current | IRRM | | 19 | | A | ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C | 5 |+ ## CAD (KiCad official) - Symbol: `STP15N60M2-EP`
page.json+500−1@@ -151,6 +151,505 @@ "Package": "TO-220", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "28c58471c655050c",+ "rows": [+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -25,+ "typ": null,+ "max": 25,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 110,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt(2)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 15,+ "conditions": "ISD ≤ 11 A, di/dt ≤ 400 A/µs; VDS peak < V(BR)DSS, VDD = 400 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "MOSFET dv/dt ruggedness",+ "symbol": "dv/dt(3)",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VDS ≤ 480 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 1.14,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 2.8,+ "conditions": "Pulse width limited by Tjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 125,+ "conditions": "Starting Tj = 25 °C, ID = IAR; VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 600 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "µA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VDS = 0 V, VGS = ±25 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.34,+ "max": 0.378,+ "conditions": "VGS = 10 V, ID = 5.5 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 11,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 44,+ "conditions": "Pulse width is limited by safe operating area",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "VGS = 0 V, ISD = 11 A",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 590,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 30,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1.1,+ "max": null,+ "conditions": "VDS = 100 V, f = 1 MHz, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Equivalent output capacitance",+ "symbol": "Coss eq.",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 148,+ "max": null,+ "conditions": "VDS = 0 to 480 V, VGS = 0 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Intrinsic gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 7,+ "max": null,+ "conditions": "f = 1 MHz, ID = 0 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "VDD = 480 V, ID = 11 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 3.1,+ "max": null,+ "conditions": "VDD = 480 V, ID = 11 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 7.3,+ "max": null,+ "conditions": "VDD = 480 V, ID = 11 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-off energy",+ "symbol": "E(off)",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 4.7,+ "max": null,+ "conditions": "VDD = 400 V, ID = 1.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-off energy",+ "symbol": "E(off)",+ "kind": "electrical",+ "unit": "µJ",+ "min": null,+ "typ": 5.2,+ "max": null,+ "conditions": "VDD = 400 V, ID = 3.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Rise time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Fall time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "VDD = 300 V, ID = 5.5 A, RG = 4.7 Ω, VGS = 10 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 280,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 2.7,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 19.5,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 400,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "µC",+ "min": null,+ "typ": 3.8,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "ISD = 11 A, di/dt = 100 A/µs, VDD = 60 V, Tj = 150 °C",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +691,4 @@ "visibility": { "public": true }-}+}