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Ray Set visibility: public 3ba47e7 1d ago
{
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  "type": "component",
  "slug": "stp12n120k5",
  "title": "STP12N120K5",
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    "subcategory": "MOSFETs",
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      "digikey": "497-STP12N120K5-ND",
      "mouser": "511-STP12N120K5"
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        "sha256": "c2ce8313307c9c24",
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-220",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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      "datasheet_sha256": "c2ce8313307c9c243aedde29b7dd92bba894bf2a99b4f217be32c921fd93c602",
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          "typ": 4,
          "max": 5,
          "conditions": "VDS = VGS, ID = 100 μA",
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          "name": "Static drain-source on-resistance",
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          "source": "datasheet"
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          "name": "Zero gate voltage drain current at TC = 125 °C",
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          "max": 50,
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          "name": "Gate-body leakage current",
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        {
          "name": "Total power dissipation",
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          "conditions": "TC = 25 °C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt(2)",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 4.5,
          "conditions": "ISD ≤ 12 A, VDS(peak) < V(BR)DSS, di/dt = 100 A/μs",
          "source_page": 2,
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          "name": "MOSFET dv/dt ruggedness",
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          "name": "Storage temperature range",
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          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal resistance, junction-to-case",
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          "min": null,
          "typ": 62.5,
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          "conditions": "TO-220 package",
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  "author": {
    "name": "Ray",
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