component

STP12N120K5

Public Made by Adom

by adom

STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstp12n120k5factory-2.0.0extractor-text

Verified STP12N120K5

by Ray · last 5 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

5 Nov 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: STP12N120K5 · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 21-page datasheet
  • ✓distributor: lcsc C495245, digikey 497-STP12N120K5-ND, mouser 511-STP12N120K5
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qc5cb48x/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ stp12n120k5.kicad_sym✓ stp12n120k5.kicad_mod✓ stp12n120k5.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 20h ago
viewers stp12n120k5: viewers · Ray 20h ago
package.json Publish 0.1.0 · Ray 20h ago
page.json Set visibility: public · Ray 20h ago
README.md Publish 0.1.0 · Ray 20h ago
stp12n120k5-etched.glb Publish 0.1.0 · Ray 20h ago
stp12n120k5-etched.step stp12n120k5: factory component page (tier=mfr) · Ray 20h ago
stp12n120k5-hero.glb stp12n120k5: hero GLB from the etched model (keeps the MPN mark) · Ray 20h ago
stp12n120k5-hero.overlay.json Publish 0.1.0 · Ray 20h ago
stp12n120k5.glb Publish 0.1.0 · Ray 20h ago
stp12n120k5.kicad_mod Publish 0.1.0 · Ray 20h ago
stp12n120k5.kicad_sym Publish 0.1.0 · Ray 20h ago
stp12n120k5.lbr Publish 0.1.0 · Ray 20h ago
stp12n120k5.step Publish 0.1.0 · Ray 20h ago
verification.json Verified: Published by the parts factory: tier mfr, 3 pins · Ray 20h ago

STP12N120K5

STMicroelectronics · MOSFETs · TO-220

STP12N120K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±30 V per the absolute maximum ratings.
2 D passive Drain terminal; rated 1200 V drain-source breakdown voltage with 12 A continuous drain current at TC = 25 °C.
3 S passive Source terminal; the reference for the ±30 V gate-source voltage rating.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate threshold voltage VGS(th) 3 4 5 V VDS = VGS, ID = 100 μA 3
Static drain-source on-resistance RDS(on) 620 690 mΩ VGS = 10 V, ID = 6 A 3
Drain-source breakdown voltage V(BR)DSS 1200 V VGS = 0 V, ID = 1 mA 3
Zero gate voltage drain current IDSS 1 μA VGS = 0 V, VDS = 1200 V 3
Zero gate voltage drain current at TC = 125 °C IDSS 50 μA VGS = 0 V, VDS = 1200 V, TC = 125 °C (specified by design, not tested in production) 3
Gate-body leakage current IGSS -10 10 μA VDS = 0 V, VGS = ±20 V 3
Gate-source voltage VGS -30 30 V 2
Drain current (continuous) ID 12 A TC = 25 °C 2
Drain current (continuous) ID 7.6 A TC = 100 °C 2
Drain current (pulsed) IDM 48 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 250 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt(2) 4.5 V/ns ISD ≤ 12 A, VDS(peak) < V(BR)DSS, di/dt = 100 A/μs 2
MOSFET dv/dt ruggedness dv/dt(3) 50 V/ns VDD = 960 V 2
Storage temperature range Tstg -55 150 °C 2
Avalanche current, repetitive or not repetitive IAR 4 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 215 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Thermal resistance, junction-to-case RthJC 0.5 °C/W 2
Thermal resistance, junction-to-ambient (TO-220 column) RthJA 62.5 °C/W TO-220 package 2

CAD (KiCad official)

  • Symbol: STP12N120K5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: stp12n120k5-etched.step / stp12n120k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stp12n120k5.step / stp12n120k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (21 pp, sha256 c2ce8313307c9c24, retrieved 2026-11-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF