component
STP12N120K5
Public Made by Adomby adom
STMicroelectronics MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSTP12N120K5
STMicroelectronics · MOSFETs · TO-220
STP12N120K5 from STMicroelectronics, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±30 V per the absolute maximum ratings. |
| 2 | D | passive | Drain terminal; rated 1200 V drain-source breakdown voltage with 12 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source terminal; the reference for the ±30 V gate-source voltage rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate threshold voltage | VGS(th) | 3 | 4 | 5 | V | VDS = VGS, ID = 100 μA | 3 |
| Static drain-source on-resistance | RDS(on) | 620 | 690 | mΩ | VGS = 10 V, ID = 6 A | 3 | |
| Drain-source breakdown voltage | V(BR)DSS | 1200 | V | VGS = 0 V, ID = 1 mA | 3 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VGS = 0 V, VDS = 1200 V | 3 | ||
| Zero gate voltage drain current at TC = 125 °C | IDSS | 50 | μA | VGS = 0 V, VDS = 1200 V, TC = 125 °C (specified by design, not tested in production) | 3 | ||
| Gate-body leakage current | IGSS | -10 | 10 | μA | VDS = 0 V, VGS = ±20 V | 3 | |
| Gate-source voltage | VGS | -30 | 30 | V | 2 | ||
| Drain current (continuous) | ID | 12 | A | TC = 25 °C | 2 | ||
| Drain current (continuous) | ID | 7.6 | A | TC = 100 °C | 2 | ||
| Drain current (pulsed) | IDM | 48 | A | Pulse width limited by safe operating area | 2 | ||
| Total power dissipation | PTOT | 250 | W | TC = 25 °C | 2 | ||
| Peak diode recovery voltage slope | dv/dt(2) | 4.5 | V/ns | ISD ≤ 12 A, VDS(peak) < V(BR)DSS, di/dt = 100 A/μs | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt(3) | 50 | V/ns | VDD = 960 V | 2 | ||
| Storage temperature range | Tstg | -55 | 150 | °C | 2 | ||
| Avalanche current, repetitive or not repetitive | IAR | 4 | A | Pulse width limited by TJ max. | 2 | ||
| Single pulse avalanche energy | EAS | 215 | mJ | Starting TJ = 25 °C, ID = IAR, VDD = 50 V | 2 | ||
| Thermal resistance, junction-to-case | RthJC | 0.5 | °C/W | 2 | |||
| Thermal resistance, junction-to-ambient (TO-220 column) | RthJA | 62.5 | °C/W | TO-220 package | 2 |
CAD (KiCad official)
- Symbol:
STP12N120K5 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
stp12n120k5-etched.step/stp12n120k5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);stp12n120k5.step/stp12n120k5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (21 pp, sha256
c2ce8313307c9c24, retrieved 2026-11-05, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).