# STGW30NC60VD

**STMicroelectronics** · IGBT Transistors / Modules · TO-247-3

STGW30NC60VD from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the IGBT; gate-emitter voltage is limited to ±20 V and gate threshold VGE(th) is 3.75 to 5.75 V. |
| 2 | C | passive | Collector (also connected to the TAB); collector-emitter voltage is 600 V max and continuous collector current is 40 A at TC = 100 °C. |
| 3 | E | passive | Emitter of the IGBT, also the anode of the antiparallel diode, which has 30 A RMS forward current at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-247-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STGW30NC60VD`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247-3 (KiCad packages3D, STEP)
- 3D model files: `stgw30nc60vd-etched.step` / `stgw30nc60vd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgw30nc60vd.step` / `stgw30nc60vd.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgw30nc60vd.pdf) (14 pp, sha256 `9b53dee28a6df991`, retrieved 2026-10-05, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stgw30nc60vd-datasheet.pdf)