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STGW30NC60VD
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STMicroelectronics IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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README.mdadded+39@@ -0,0 +1,39 @@+# STGW30NC60VD++**STMicroelectronics** · IGBT Transistors / Modules · TO-247-3++STGW30NC60VD from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate of the IGBT; gate-emitter voltage is limited to ±20 V and gate threshold VGE(th) is 3.75 to 5.75 V. |+| 2 | C | passive | Collector (also connected to the TAB); collector-emitter voltage is 600 V max and continuous collector current is 40 A at TC = 100 °C. |+| 3 | E | passive | Emitter of the IGBT, also the anode of the antiparallel diode, which has 30 A RMS forward current at TC = 25 °C. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | TO-247-3 |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STGW30NC60VD`+- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`+- 3D model: TO-247-3 (KiCad packages3D, STEP)+- 3D model files: `stgw30nc60vd-etched.step` / `stgw30nc60vd-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgw30nc60vd.step` / `stgw30nc60vd.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgw30nc60vd.pdf) (14 pp, sha256 `9b53dee28a6df991`, retrieved 2026-10-05, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/stgw30nc60vd-datasheet.pdf)
page.jsonadded+131@@ -0,0 +1,131 @@+{+ "slug": "stgw30nc60vd",+ "version": "0.1.0",+ "type": "component",+ "description": "STMicroelectronics IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+ "tags": [+ "component",+ "transistors-thyristors",+ "stgw30nc60vd",+ "factory-2.0.0",+ "extractor-text"+ ],+ "dependencies": {},+ "hero": {+ "type": "image",+ "path": "docs/hero.png"+ },+ "files": [+ "page.json",+ "README.md",+ "stgw30nc60vd.kicad_sym",+ "stgw30nc60vd.kicad_mod",+ "stgw30nc60vd.glb",+ "stgw30nc60vd.step",+ "stgw30nc60vd.lbr",+ "docs/hero.png",+ "docs/stgw30nc60vd-datasheet.pdf",+ "viewers/symbol.html",+ "viewers/footprint.html",+ "stgw30nc60vd-hero.glb",+ "stgw30nc60vd-hero.overlay.json"+ ],+ "component": {+ "mpn": "STGW30NC60VD",+ "manufacturer": "STMicroelectronics",+ "package": "TO-247-3",+ "pin_count": 3,+ "category": "Transistors/Thyristors",+ "subcategory": "IGBT Transistors / Modules",+ "datasheet": "https://www.st.com/resource/en/datasheet/stgw30nc60vd.pdf",+ "parts": {+ "symbol": "stgw30nc60vd.kicad_sym",+ "footprint": "stgw30nc60vd.kicad_mod",+ "model_3d": "stgw30nc60vd-hero.glb",+ "model_3d_plain": "stgw30nc60vd.glb",+ "model_3d_step": "stgw30nc60vd-etched.step",+ "model_3d_step_plain": "stgw30nc60vd.step",+ "lbr": "stgw30nc60vd.lbr"+ },+ "distributor_links": {+ "lcsc": 2970900,+ "digikey": "497-5969-5-ND",+ "mouser": "511-STGW30NC60VD"+ },+ "distributor_check": {+ "checked_at": "2026-10-05T23:08:19Z",+ "source": "Component Ocean /api/assign-pns",+ "digikey": {+ "pn": "497-5969-5-ND",+ "status": "found",+ "lifecycle": "Obsolete"+ },+ "mouser": {+ "pn": "511-STGW30NC60VD",+ "status": "found",+ "lifecycle": "End of Life"+ }+ },+ "pins": [+ {+ "number": "1",+ "name": "G",+ "type": "input",+ "description": "Gate of the IGBT; gate-emitter voltage is limited to ±20 V and gate threshold VGE(th) is 3.75 to 5.75 V."+ },+ {+ "number": "2",+ "name": "C",+ "type": "passive",+ "description": "Collector (also connected to the TAB); collector-emitter voltage is 600 V max and continuous collector current is 40 A at TC = 100 °C."+ },+ {+ "number": "3",+ "name": "E",+ "type": "passive",+ "description": "Emitter of the IGBT, also the anode of the antiparallel diode, which has 30 A RMS forward current at TC = 25 °C."+ }+ ],+ "provenance": {+ "extractor": "extract_pins 0.3",+ "factory_chain": {+ "factory": "2.0.0",+ "extractor": "extract_pins 0.3",+ "primary_model": "claude-haiku-4-5-20251001",+ "primary_mode": "text",+ "consensus_model": "claude-sonnet-5-5",+ "consensus": "agreed",+ "guards": "pin_guards 0.1: passed",+ "guard_notes": [+ "extractor flagged: Datasheet does not explicitly specify pin numbers for the TO-247-3 package in the provided text; sta"+ ],+ "pages_sent": 14,+ "cost_usd": 0.1357,+ "at": "2026-10-05T23:08:06"+ },+ "datasheet": {+ "url": "https://www.st.com/resource/en/datasheet/stgw30nc60vd.pdf",+ "pages": 14,+ "sha256": "9b53dee28a6df991",+ "source_tier": "mfr"+ },+ "cad": "KiCad official (CC-BY-SA 4.0)",+ "pins": {+ "total": 3,+ "described": 3,+ "cites_pages": true,+ "refuses_to_fabricate": true+ }+ },+ "viewers": {+ "symbol": "viewers/symbol.html",+ "footprint": "viewers/footprint.html"+ }+ },+ "visibility": "public",+ "org": "adom",+ "author": {+ "name": "Ray",+ "email": "[email protected]"+ }+}