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STGW30NC60VD

Public Made by Adom

by adom

STMicroelectronics IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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STGW30NC60VD

STMicroelectronics · IGBT Transistors / Modules · TO-247-3

STGW30NC60VD from STMicroelectronics, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the IGBT; gate-emitter voltage is limited to ±20 V and gate threshold VGE(th) is 3.75 to 5.75 V.
2 C passive Collector (also connected to the TAB); collector-emitter voltage is 600 V max and continuous collector current is 40 A at TC = 100 °C.
3 E passive Emitter of the IGBT, also the anode of the antiparallel diode, which has 30 A RMS forward current at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STGW30NC60VD
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: stgw30nc60vd-etched.step / stgw30nc60vd-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgw30nc60vd.step / stgw30nc60vd.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (14 pp, sha256 9b53dee28a6df991, retrieved 2026-10-05, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF