# STGD6M65DF2

**STMicroelectronics** · IGBT Transistors / Modules · TO-252

STGD6M65DF2 from STMicroelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Insulated-gate control terminal of the IGBT. Gate-emitter threshold voltage VGE(th) typ. 6 V (5 V min, 7 V max); absolute max gate-emitter voltage VGE = +/-20 V. Drive typically at VGE = 15 V for full enhancement. |
| 2 | C | passive | Collector. Also connected to the DPAK TAB (heat-sinking tab). Rated VCES = 650 V, continuous IC = 12 A at TC = 25 degC (6 A at TC = 100 degC), pulsed ICP = 24 A. Anode of the internal antiparallel freewheeling diode is the emitter; cathode is the collector. |
| 3 | E | passive | Emitter. Power return terminal of the IGBT and anode of the internal antiparallel diode. IF continuous = 12 A at TC = 25 degC (6 A at TC = 100 degC); pulsed IFP = 24 A; VF typ. 2.6 V at IF = 6 A. |
| TAB | C | passive | Metal heat-sink tab, electrically connected to the collector (pin 2). Used for thermal dissipation to the PCB copper pour; RthJC = 1.7 degC/W. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 4 |

## Ordering variants

Same part, different packaging or reel option.

- `STGD6M65DF2`

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage (VGE = 0 V) | VCES |  |  | 650 | V | VGE = 0 V | 2 |
| Continuous collector current at TC = 25 °C | IC |  |  | 12 | A | TC = 25 °C | 2 |
| Continuous collector current at TC = 100 °C | IC |  |  | 6 | A | TC = 100 °C | 2 |
| Pulsed collector current | ICP |  |  | 24 | A |  | 2 |
| Gate-emitter voltage | VGE | -20 |  | 20 | V |  | 2 |
| Continuous forward current at TC = 25 °C | IF |  |  | 12 | A | TC = 25 °C | 2 |
| Continuous forward current at TC = 100 °C | IF |  |  | 6 | A | TC = 100 °C | 2 |
| Pulsed forward current | IFP |  |  | 24 | A |  | 2 |
| Total power dissipation at TC = 25 °C | PTOT |  |  | 88 | W | TC = 25 °C | 2 |
| Storage temperature range | TSTG | -55 |  | 150 | °C |  | 2 |
| Operating junction temperature range | TJ | -55 |  | 175 | °C |  | 2 |
| Collector-emitter breakdown voltage | V(BR)CES | 650 |  |  | V | VGE = 0 V, IC = 250 µA | 3 |
| Collector-emitter saturation voltage | VCE(sat) |  | 1.55 | 2 | V | VGE = 15 V, IC = 6 A | 3 |
| Forward on-voltage | VF |  | 2.6 | 3.5 | V | IF = 6 A | 3 |
| Gate threshold voltage | VGE(th) | 5 | 6 | 7 | V | VCE = VGE, IC = 250 µA | 3 |
| Collector cut-off current | ICES |  |  | 25 | µA | VGE = 0 V, VCE = 650 V | 3 |
| Gate-emitter leakage current | IGES | -250 |  | 250 | nA | VCE = 0 V, VGE = ±20 V | 3 |
| Short-circuit withstand time (VGE = 15 V) | tsc | 6 |  |  | µs | VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C | 4 |
| Short-circuit withstand time (VGE = 13 V) | tsc | 10 |  |  | µs | VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C | 4 |
| Collector-emitter saturation voltage at TJ = 125 °C | VCE(sat) |  | 1.9 |  | V | VGE = 15 V, IC = 6 A, TJ = 125 °C | 3 |
| Collector-emitter saturation voltage at TJ = 175 °C | VCE(sat) |  | 2.1 |  | V | VGE = 15 V, IC = 6 A, TJ = 175 °C | 3 |
| Forward on-voltage at TJ = 125 °C | VF |  | 2.3 |  | V | IF = 6 A, TJ = 125 °C | 3 |
| Forward on-voltage at TJ = 175 °C | VF |  | 2.2 |  | V | IF = 6 A, TJ = 175 °C | 3 |
| Thermal resistance, junction-to-case IGBT | RthJC |  | 1.7 |  | °C/W |  | 2 |
| Thermal resistance, junction-to-case diode | RthJC |  | 5 |  | °C/W |  | 2 |
| Thermal resistance, junction-to-ambient | RthJA |  | 100 |  | °C/W |  | 2 |

## CAD (KiCad official)

- Symbol: `STGD6M65DF2`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `stgd6m65df2-etched.step` / `stgd6m65df2-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stgd6m65df2.step` / `stgd6m65df2.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stgd6m65df2.pdf) (18 pp, sha256 `3456c456d698fc5c`, retrieved 2026-08-17, tier: manufacturer)
- **Extractor:** `ds2sf` (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stgd6m65df2-datasheet.pdf)