component
STGD6M65DF2
Public Made by Adomby adom
STMicroelectronics IGBT Transistors / Modules, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
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stgd6m65df2: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+352
README.md+33@@ -28,6 +28,39 @@ Same part, different packaging or reel option. - `STGD6M65DF2` +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter voltage (VGE = 0 V) | VCES | | | 650 | V | VGE = 0 V | 2 |+| Continuous collector current at TC = 25 °C | IC | | | 12 | A | TC = 25 °C | 2 |+| Continuous collector current at TC = 100 °C | IC | | | 6 | A | TC = 100 °C | 2 |+| Pulsed collector current | ICP | | | 24 | A | | 2 |+| Gate-emitter voltage | VGE | -20 | | 20 | V | | 2 |+| Continuous forward current at TC = 25 °C | IF | | | 12 | A | TC = 25 °C | 2 |+| Continuous forward current at TC = 100 °C | IF | | | 6 | A | TC = 100 °C | 2 |+| Pulsed forward current | IFP | | | 24 | A | | 2 |+| Total power dissipation at TC = 25 °C | PTOT | | | 88 | W | TC = 25 °C | 2 |+| Storage temperature range | TSTG | -55 | | 150 | °C | | 2 |+| Operating junction temperature range | TJ | -55 | | 175 | °C | | 2 |+| Collector-emitter breakdown voltage | V(BR)CES | 650 | | | V | VGE = 0 V, IC = 250 µA | 3 |+| Collector-emitter saturation voltage | VCE(sat) | | 1.55 | 2 | V | VGE = 15 V, IC = 6 A | 3 |+| Forward on-voltage | VF | | 2.6 | 3.5 | V | IF = 6 A | 3 |+| Gate threshold voltage | VGE(th) | 5 | 6 | 7 | V | VCE = VGE, IC = 250 µA | 3 |+| Collector cut-off current | ICES | | | 25 | µA | VGE = 0 V, VCE = 650 V | 3 |+| Gate-emitter leakage current | IGES | -250 | | 250 | nA | VCE = 0 V, VGE = ±20 V | 3 |+| Short-circuit withstand time (VGE = 15 V) | tsc | 6 | | | µs | VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C | 4 |+| Short-circuit withstand time (VGE = 13 V) | tsc | 10 | | | µs | VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C | 4 |+| Collector-emitter saturation voltage at TJ = 125 °C | VCE(sat) | | 1.9 | | V | VGE = 15 V, IC = 6 A, TJ = 125 °C | 3 |+| Collector-emitter saturation voltage at TJ = 175 °C | VCE(sat) | | 2.1 | | V | VGE = 15 V, IC = 6 A, TJ = 175 °C | 3 |+| Forward on-voltage at TJ = 125 °C | VF | | 2.3 | | V | IF = 6 A, TJ = 125 °C | 3 |+| Forward on-voltage at TJ = 175 °C | VF | | 2.2 | | V | IF = 6 A, TJ = 175 °C | 3 |+| Thermal resistance, junction-to-case IGBT | RthJC | | 1.7 | | °C/W | | 2 |+| Thermal resistance, junction-to-case diode | RthJC | | 5 | | °C/W | | 2 |+| Thermal resistance, junction-to-ambient | RthJA | | 100 | | °C/W | | 2 |+ ## CAD (KiCad official) - Symbol: `STGD6M65DF2`
page.json+319@@ -122,6 +122,325 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "3456c456d698fc5c",+ "rows": [+ {+ "name": "Collector-emitter voltage (VGE = 0 V)",+ "symbol": "VCES",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "VGE = 0 V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous collector current at TC = 25 °C",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous collector current at TC = 100 °C",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed collector current",+ "symbol": "ICP",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous forward current at TC = 25 °C",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous forward current at TC = 100 °C",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 6,+ "conditions": "TC = 100 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed forward current",+ "symbol": "IFP",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 24,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation at TC = 25 °C",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 88,+ "conditions": "TC = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGE = 0 V, IC = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.55,+ "max": 2,+ "conditions": "VGE = 15 V, IC = 6 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward on-voltage",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.6,+ "max": 3.5,+ "conditions": "IF = 6 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGE(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 5,+ "typ": 6,+ "max": 7,+ "conditions": "VCE = VGE, IC = 250 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector cut-off current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "VGE = 0 V, VCE = 650 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter leakage current",+ "symbol": "IGES",+ "kind": "electrical",+ "unit": "nA",+ "min": -250,+ "typ": null,+ "max": 250,+ "conditions": "VCE = 0 V, VGE = ±20 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Short-circuit withstand time (VGE = 15 V)",+ "symbol": "tsc",+ "kind": "timing",+ "unit": "µs",+ "min": 6,+ "typ": null,+ "max": null,+ "conditions": "VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Short-circuit withstand time (VGE = 13 V)",+ "symbol": "tsc",+ "kind": "timing",+ "unit": "µs",+ "min": 10,+ "typ": null,+ "max": null,+ "conditions": "VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage at TJ = 125 °C",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.9,+ "max": null,+ "conditions": "VGE = 15 V, IC = 6 A, TJ = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage at TJ = 175 °C",+ "symbol": "VCE(sat)",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.1,+ "max": null,+ "conditions": "VGE = 15 V, IC = 6 A, TJ = 175 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward on-voltage at TJ = 125 °C",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.3,+ "max": null,+ "conditions": "IF = 6 A, TJ = 125 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward on-voltage at TJ = 175 °C",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 2.2,+ "max": null,+ "conditions": "IF = 6 A, TJ = 175 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case IGBT",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 1.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-case diode",+ "symbol": "RthJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 5,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance, junction-to-ambient",+ "symbol": "RthJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 100,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [