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STGD6M65DF2

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STMicroelectronics IGBT Transistors / Modules, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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docs stgd6m65df2: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain ST… · Ray 23d ago
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package.json Publish 0.1.0 · Ray 2mo ago
page.json stgd6m65df2: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain ST… · Ray 23d ago
README.md stgd6m65df2: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 24d ago
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stgd6m65df2-etched.glb stgd6m65df2: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain ST… · Ray 23d ago
stgd6m65df2-etched.step stgd6m65df2: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain ST… · Ray 23d ago
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STGD6M65DF2

STMicroelectronics · IGBT Transistors / Modules · TO-252

STGD6M65DF2 from STMicroelectronics, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Insulated-gate control terminal of the IGBT. Gate-emitter threshold voltage VGE(th) typ. 6 V (5 V min, 7 V max); absolute max gate-emitter voltage VGE = +/-20 V. Drive typically at VGE = 15 V for full enhancement.
2 C passive Collector. Also connected to the DPAK TAB (heat-sinking tab). Rated VCES = 650 V, continuous IC = 12 A at TC = 25 degC (6 A at TC = 100 degC), pulsed ICP = 24 A. Anode of the internal antiparallel freewheeling diode is the emitter; cathode is the collector.
3 E passive Emitter. Power return terminal of the IGBT and anode of the internal antiparallel diode. IF continuous = 12 A at TC = 25 degC (6 A at TC = 100 degC); pulsed IFP = 24 A; VF typ. 2.6 V at IF = 6 A.
TAB C passive Metal heat-sink tab, electrically connected to the collector (pin 2). Used for thermal dissipation to the PCB copper pour; RthJC = 1.7 degC/W.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package TO-252
Category Transistors/Thyristors
Pins 4

Ordering variants

Same part, different packaging or reel option.

  • STGD6M65DF2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (VGE = 0 V) VCES 650 V VGE = 0 V 2
Continuous collector current at TC = 25 °C IC 12 A TC = 25 °C 2
Continuous collector current at TC = 100 °C IC 6 A TC = 100 °C 2
Pulsed collector current ICP 24 A 2
Gate-emitter voltage VGE -20 20 V 2
Continuous forward current at TC = 25 °C IF 12 A TC = 25 °C 2
Continuous forward current at TC = 100 °C IF 6 A TC = 100 °C 2
Pulsed forward current IFP 24 A 2
Total power dissipation at TC = 25 °C PTOT 88 W TC = 25 °C 2
Storage temperature range TSTG -55 150 °C 2
Operating junction temperature range TJ -55 175 °C 2
Collector-emitter breakdown voltage V(BR)CES 650 V VGE = 0 V, IC = 250 µA 3
Collector-emitter saturation voltage VCE(sat) 1.55 2 V VGE = 15 V, IC = 6 A 3
Forward on-voltage VF 2.6 3.5 V IF = 6 A 3
Gate threshold voltage VGE(th) 5 6 7 V VCE = VGE, IC = 250 µA 3
Collector cut-off current ICES 25 µA VGE = 0 V, VCE = 650 V 3
Gate-emitter leakage current IGES -250 250 nA VCE = 0 V, VGE = ±20 V 3
Short-circuit withstand time (VGE = 15 V) tsc 6 µs VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C 4
Short-circuit withstand time (VGE = 13 V) tsc 10 µs VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C 4
Collector-emitter saturation voltage at TJ = 125 °C VCE(sat) 1.9 V VGE = 15 V, IC = 6 A, TJ = 125 °C 3
Collector-emitter saturation voltage at TJ = 175 °C VCE(sat) 2.1 V VGE = 15 V, IC = 6 A, TJ = 175 °C 3
Forward on-voltage at TJ = 125 °C VF 2.3 V IF = 6 A, TJ = 125 °C 3
Forward on-voltage at TJ = 175 °C VF 2.2 V IF = 6 A, TJ = 175 °C 3
Thermal resistance, junction-to-case IGBT RthJC 1.7 °C/W 2
Thermal resistance, junction-to-case diode RthJC 5 °C/W 2
Thermal resistance, junction-to-ambient RthJA 100 °C/W 2

CAD (KiCad official)

  • Symbol: STGD6M65DF2
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: stgd6m65df2-etched.step / stgd6m65df2-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stgd6m65df2.step / stgd6m65df2.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (18 pp, sha256 3456c456d698fc5c, retrieved 2026-08-17, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF