STGD6M65DF2

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  "type": "component",
  "slug": "stgd6m65df2",
  "title": "STGD6M65DF2",
  "brief": "STMicroelectronics IGBT Transistors / Modules, TO-252. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
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  "component": {
    "mpn": "STGD6M65DF2",
    "manufacturer": "STMicroelectronics",
    "package": "TO-252",
    "pin_count": 4,
    "category": "Transistors/Thyristors",
    "subcategory": "IGBT Transistors / Modules",
    "datasheet": "https://www.st.com/resource/en/datasheet/stgd6m65df2.pdf",
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    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate. Insulated-gate control terminal of the IGBT. Gate-emitter threshold voltage VGE(th) typ. 6 V (5 V min, 7 V max); absolute max gate-emitter voltage VGE = +/-20 V. Drive typically at VGE = 15 V for full enhancement."
      },
      {
        "number": "2",
        "name": "C",
        "type": "passive",
        "description": "Collector. Also connected to the DPAK TAB (heat-sinking tab). Rated VCES = 650 V, continuous IC = 12 A at TC = 25 degC (6 A at TC = 100 degC), pulsed ICP = 24 A. Anode of the internal antiparallel freewheeling diode is the emitter; cathode is the collector."
      },
      {
        "number": "3",
        "name": "E",
        "type": "passive",
        "description": "Emitter. Power return terminal of the IGBT and anode of the internal antiparallel diode. IF continuous = 12 A at TC = 25 degC (6 A at TC = 100 degC); pulsed IFP = 24 A; VF typ. 2.6 V at IF = 6 A."
      },
      {
        "number": "TAB",
        "name": "C",
        "type": "passive",
        "description": "Metal heat-sink tab, electrically connected to the collector (pin 2). Used for thermal dissipation to the PCB copper pour; RthJC = 1.7 degC/W."
      }
    ],
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        "pages": 18,
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        "source_tier": "mfr"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 4,
        "described": 4,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "extents_mm": [
          9.9,
          6.5,
          2.32
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        "zmin_mm": -0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
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        "checked": "2026-10-07",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "4"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
        {
          "name": "Collector-emitter voltage (VGE = 0 V)",
          "symbol": "VCES",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 650,
          "conditions": "VGE = 0 V",
          "source_page": 2,
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        },
        {
          "name": "Continuous collector current at TC = 25 °C",
          "symbol": "IC",
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          "max": 12,
          "conditions": "TC = 25 °C",
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        {
          "name": "Continuous collector current at TC = 100 °C",
          "symbol": "IC",
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          "max": 6,
          "conditions": "TC = 100 °C",
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        {
          "name": "Pulsed collector current",
          "symbol": "ICP",
          "kind": "absolute_maximum",
          "unit": "A",
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          "typ": null,
          "max": 24,
          "conditions": "",
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        {
          "name": "Gate-emitter voltage",
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          "typ": null,
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          "conditions": "",
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        },
        {
          "name": "Continuous forward current at TC = 25 °C",
          "symbol": "IF",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 12,
          "conditions": "TC = 25 °C",
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        {
          "name": "Continuous forward current at TC = 100 °C",
          "symbol": "IF",
          "kind": "absolute_maximum",
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          "conditions": "TC = 100 °C",
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        {
          "name": "Pulsed forward current",
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          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 24,
          "conditions": "",
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        },
        {
          "name": "Total power dissipation at TC = 25 °C",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 88,
          "conditions": "TC = 25 °C",
          "source_page": 2,
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        },
        {
          "name": "Storage temperature range",
          "symbol": "TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Operating junction temperature range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 175,
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        },
        {
          "name": "Collector-emitter breakdown voltage",
          "symbol": "V(BR)CES",
          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
          "max": null,
          "conditions": "VGE = 0 V, IC = 250 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Collector-emitter saturation voltage",
          "symbol": "VCE(sat)",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.55,
          "max": 2,
          "conditions": "VGE = 15 V, IC = 6 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Forward on-voltage",
          "symbol": "VF",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 2.6,
          "max": 3.5,
          "conditions": "IF = 6 A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "VGE(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 5,
          "typ": 6,
          "max": 7,
          "conditions": "VCE = VGE, IC = 250 µA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Collector cut-off current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 25,
          "conditions": "VGE = 0 V, VCE = 650 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-emitter leakage current",
          "symbol": "IGES",
          "kind": "electrical",
          "unit": "nA",
          "min": -250,
          "typ": null,
          "max": 250,
          "conditions": "VCE = 0 V, VGE = ±20 V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Short-circuit withstand time (VGE = 15 V)",
          "symbol": "tsc",
          "kind": "timing",
          "unit": "µs",
          "min": 6,
          "typ": null,
          "max": null,
          "conditions": "VCC ≤ 400 V, VGE = 15 V, TJstart ≤ 150 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Short-circuit withstand time (VGE = 13 V)",
          "symbol": "tsc",
          "kind": "timing",
          "unit": "µs",
          "min": 10,
          "typ": null,
          "max": null,
          "conditions": "VCC ≤ 400 V, VGE = 13 V, TJstart ≤ 150 °C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Collector-emitter saturation voltage at TJ = 125 °C",
          "symbol": "VCE(sat)",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.9,
          "max": null,
          "conditions": "VGE = 15 V, IC = 6 A, TJ = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Collector-emitter saturation voltage at TJ = 175 °C",
          "symbol": "VCE(sat)",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 2.1,
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          "conditions": "VGE = 15 V, IC = 6 A, TJ = 175 °C",
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          "name": "Forward on-voltage at TJ = 125 °C",
          "symbol": "VF",
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          "unit": "V",
          "min": null,
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          "max": null,
          "conditions": "IF = 6 A, TJ = 125 °C",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Forward on-voltage at TJ = 175 °C",
          "symbol": "VF",
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          "unit": "V",
          "min": null,
          "typ": 2.2,
          "max": null,
          "conditions": "IF = 6 A, TJ = 175 °C",
          "source_page": 3,
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        },
        {
          "name": "Thermal resistance, junction-to-case IGBT",
          "symbol": "RthJC",
          "kind": "thermal",
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          "min": null,
          "typ": 1.7,
          "max": null,
          "conditions": "",
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        {
          "name": "Thermal resistance, junction-to-case diode",
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          "kind": "thermal",
          "unit": "°C/W",
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          "typ": 5,
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          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal resistance, junction-to-ambient",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 100,
          "max": null,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
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    "email": "[email protected]"
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