component

STD65N55F3

Public Made by Adom

by adom

STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstd65n55f3factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
viewers std65n55f3: viewers · Ray 22d ago
package.json std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
page.json std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
README.md std65n55f3: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 17d ago
std65n55f3-etched.glb std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
std65n55f3-etched.step std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
std65n55f3-hero.glb std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
std65n55f3-hero.overlay.json std65n55f3: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
std65n55f3.glb Publish 0.1.0 · Ray 22d ago
std65n55f3.kicad_mod Publish 0.1.0 · Ray 22d ago
std65n55f3.kicad_sym Publish 0.1.0 · Ray 22d ago
std65n55f3.lbr Publish 0.1.0 · Ray 22d ago
std65n55f3.step Publish 0.1.0 · Ray 22d ago

STD65N55F3

STMicroelectronics · MOSFETs · DPAK

STD65N55F3 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V in the absolute maximum ratings.
2 D passive Drain terminal, electrically connected to the TAB, with drain-source voltage VDS rated at 55 V in the absolute maximum ratings.
3 S passive Source terminal of the N-channel MOSFET; the datasheet rates source-drain current ISD at 80 A continuous and 320 A pulsed.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 55 V 2
Gate-source voltage VGS -20 20 V 2
Drain current (continuous) ID 80 A TC = 25 °C 2
Drain current (continuous) ID 56 A TC = 100 °C 2
Drain current (pulsed) IDM 320 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 110 W TC = 25 °C 2
Peak diode recovery dv/dt 11 V/ns ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax 2
Single pulse avalanche energy EAS 390 mJ Starting Tj = 25°C, ID = 32 A, VDD = 25 V 2
Operating junction temperature range Tj -55 175 °C 2
Thermal resistance junction-case Rthj-case 1.36 °C/W 2
Thermal resistance junction-pcb Rthj-pcb 50 °C/W Mounted on an 1- inch² FR-4 board, 2oz Cu 2
Drain-source breakdown voltage V(BR)DSS 55 V VGS = 0 V, ID = 250 µA 3
Zero gate voltage drain current IDSS 10 µA VGS = 0 V, VDS = 55 V 3
Zero gate voltage drain current IDSS 100 µA VGS = 0 V, VDS = 55 V, TC = 125 °C 3
Gate-body leakage current IGSS -200 200 nA VGS = ±20 V, VDS = 0 V 3
Gate threshold voltage VGS(th) 2 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 6.5 8.5 mΩ VGS = 10 V, ID = 32 A 3
Total gate charge Qg 33.5 45 nC VDD = 27 V, ID = 65 A, VGS = 0 to 10 V 3
Source-drain current ISD 80 A 4
Source-drain current (pulsed) ISDM 320 A Pulsed: pulse duration = 300 μs, duty cycle 1.5% 4

CAD (KiCad official)

  • Symbol: STD65N55F3
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std65n55f3-etched.step / std65n55f3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std65n55f3.step / std65n55f3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (17 pp, sha256 4d52fdbad0cfe733, retrieved 2026-10-11, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF