STD65N55F3

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      "lcsc": "C5269570",
      "digikey": "497-7973-2-ND",
      "mouser": "511-STD65N55F3"
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET, with gate-source voltage VGS rated at ±20 V in the absolute maximum ratings."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the TAB, with drain-source voltage VDS rated at 55 V in the absolute maximum ratings."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET; the datasheet rates source-drain current ISD at 80 A continuous and 320 A pulsed."
      }
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      "Manufacturer": "STMicroelectronics",
      "Package": "DPAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
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          "name": "Drain-source voltage",
          "symbol": "VDS",
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          "typ": null,
          "max": 55,
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        {
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          "name": "Drain current (continuous)",
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          "conditions": "TC = 25 °C",
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          "name": "Drain current (continuous)",
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          "kind": "absolute_maximum",
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          "conditions": "TC = 100 °C",
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        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
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        {
          "name": "Total power dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 110,
          "conditions": "TC = 25 °C",
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        },
        {
          "name": "Peak diode recovery",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 11,
          "conditions": "ISD ≤ 65A, di/dt ≤ 300 A/μs, VDD ≤ V(BR)DSS, Tj ≤ Tjmax",
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          "name": "Single pulse avalanche energy",
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          "unit": "mJ",
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          "name": "Thermal resistance junction-case",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 1.36,
          "max": null,
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        {
          "name": "Thermal resistance junction-pcb",
          "symbol": "Rthj-pcb",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
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          "max": null,
          "conditions": "Mounted on an 1- inch² FR-4 board, 2oz Cu",
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        },
        {
          "name": "Drain-source breakdown voltage",
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          "kind": "electrical",
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        {
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        {
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          "conditions": "VGS = 0 V, VDS = 55 V, TC = 125 °C",
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        {
          "name": "Gate-body leakage current",
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          "kind": "electrical",
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        {
          "name": "Gate threshold voltage",
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          "conditions": "VDS = VGS, ID = 250 µA",
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        {
          "name": "Static drain-source on-resistance",
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          "name": "Total gate charge",
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          "conditions": "VDD = 27 V, ID = 65 A, VGS = 0 to 10 V",
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          "name": "Source-drain current",
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          "name": "Source-drain current (pulsed)",
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