component
STD1NK60T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std1nk60t4: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
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STD1NK60T4
STMicroelectronics · MOSFETs · DPAK
STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V. |
| 2 | Drain | bidirectional | Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation. |
| 3 | Source | bidirectional | Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | V | VGS = 0 V, ID = 1 mA | 4 | ||
| Zero gate voltage drain current | IDSS | 1 | µA | VGS = 0 V, VDS = 600 V | 4 | ||
| Zero gate voltage drain current (TC = 125 °C) | IDSS | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (1) | 4 | ||
| Gate body leakage current | IGSS | -100 | 100 | nA | VDS=0 V, VGS= ±30 V | 4 | |
| Gate threshold voltage | VGS(th) | 2.25 | 3 | 3.7 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | 7.3 | 8.5 | Ω | VGS = 10 V, ID = 0.5 A | 4 | |
| Source-drain current (continuous) | ISD | 1 | A | 5 | |||
| Source-drain current (pulsed) | ISDM | 4 | A | 5 | |||
| Forward on voltage | VSD | 1.6 | V | ISD = 1.0 A, VGS = 0 V | 5 | ||
| Drain-source voltage | VDS | 600 | V | 3 | |||
| Drain-gate voltage | VDGR | 600 | V | RGS = 20 kΩ | 3 | ||
| Gate-source voltage | VGS | -30 | 30 | V | 3 | ||
| Drain current (continuous) | ID | 1 | A | TC = 25 °C | 3 | ||
| Drain current (continuous) | ID | 0.63 | A | TC = 100 °C | 3 | ||
| Drain current (pulsed) | IDM | 4 | A | 3 | |||
| Total dissipation | PTOT | 30 | W | TC = 25 °C | 3 | ||
| Avalanche current, repetitive or not-repetitive | IAR | 1 | A | pulse width limited by Tjmax | 3 | ||
| Single pulse avalanche energy | EAS | 25 | mJ | starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 | ||
| Peak diode recovery voltage slope | dv/dt | 3 | V/ns | ISD ≤ 1.0 A, di/dt ≤ 100 A/µs; VDD ≤ V(BR)DSS, TJ ≤ TJMAX | 3 | ||
| Operating junction temperature range | Tj | -55 | 150 | °C | 3 | ||
| Thermal resistance junction-case | Rthj-case | 4.2 | °C/W | 3 | |||
| Thermal resistance junction-ambient | Rthj-amb | 100 | °C/W | 3 |
CAD (KiCad official)
- Symbol:
STD1NK60T4 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
std1nk60t4-etched.step/std1nk60t4-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);std1nk60t4.step/std1nk60t4.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: STMicroelectronics datasheet (19 pp, sha256
5fa21f83526f2245, retrieved 2026-09-24, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# STD1NK60T4
**STMicroelectronics** · MOSFETs · DPAK
STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V. |
| 2 | Drain | bidirectional | Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation. |
| 3 | Source | bidirectional | Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS = 0 V, ID = 1 mA | 4 |
| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 600 V | 4 |
| Zero gate voltage drain current (TC = 125 °C) | IDSS | | | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (1) | 4 |
| Gate body leakage current | IGSS | -100 | | 100 | nA | VDS=0 V, VGS= ±30 V | 4 |
| Gate threshold voltage | VGS(th) | 2.25 | 3 | 3.7 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on-resistance | RDS(on) | | 7.3 | 8.5 | Ω | VGS = 10 V, ID = 0.5 A | 4 |
| Source-drain current (continuous) | ISD | | | 1 | A | | 5 |
| Source-drain current (pulsed) | ISDM | | | 4 | A | | 5 |
| Forward on voltage | VSD | | | 1.6 | V | ISD = 1.0 A, VGS = 0 V | 5 |
| Drain-source voltage | VDS | | | 600 | V | | 3 |
| Drain-gate voltage | VDGR | | | 600 | V | RGS = 20 kΩ | 3 |
| Gate-source voltage | VGS | -30 | | 30 | V | | 3 |
| Drain current (continuous) | ID | | | 1 | A | TC = 25 °C | 3 |
| Drain current (continuous) | ID | | | 0.63 | A | TC = 100 °C | 3 |
| Drain current (pulsed) | IDM | | | 4 | A | | 3 |
| Total dissipation | PTOT | | | 30 | W | TC = 25 °C | 3 |
| Avalanche current, repetitive or not-repetitive | IAR | | | 1 | A | pulse width limited by Tjmax | 3 |
| Single pulse avalanche energy | EAS | | | 25 | mJ | starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 |
| Peak diode recovery voltage slope | dv/dt | | | 3 | V/ns | ISD ≤ 1.0 A, di/dt ≤ 100 A/µs; VDD ≤ V(BR)DSS, TJ ≤ TJMAX | 3 |
| Operating junction temperature range | Tj | -55 | | 150 | °C | | 3 |
| Thermal resistance junction-case | Rthj-case | | | 4.2 | °C/W | | 3 |
| Thermal resistance junction-ambient | Rthj-amb | | | 100 | °C/W | | 3 |
## CAD (KiCad official)
- Symbol: `STD1NK60T4`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `std1nk60t4-etched.step` / `std1nk60t4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `std1nk60t4.step` / `std1nk60t4.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/std1nk60t4.pdf) (19 pp, sha256 `5fa21f83526f2245`, retrieved 2026-09-24, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/std1nk60t4-datasheet.pdf)