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Contents

README

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STD1NK60T4

STMicroelectronics · MOSFETs · DPAK

STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V.
2 Drain bidirectional Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation.
3 Source bidirectional Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STD1NK60T4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std1nk60t4-etched.step / std1nk60t4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std1nk60t4.step / std1nk60t4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (19 pp, sha256 5fa21f83526f2245, retrieved 2026-09-24, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF