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Contents

README

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STD1NK60T4

STMicroelectronics · MOSFETs · DPAK

STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with absolute maximum gate-source voltage rating of ±30 V; gate threshold voltage 2.25-3.7 V at ID = 250 µA; gate-body leakage current ±100 nA at VDS = 0 V, VGS = ±30 V.
2 Drain bidirectional Drain terminal with maximum drain-source voltage 600 V, drain-source breakdown voltage 600 V at ID = 1 mA; continuous drain current 1.0 A at TC = 25 °C and 0.63 A at TC = 100 °C; pulsed drain current 4 A; connected to thermal tab for heat dissipation.
3 Source bidirectional Source terminal and intrinsic diode cathode; source-drain diode forward voltage 1.6 V at ISD = 1.0 A with reverse recovery time 140 ns at TJ = 25 °C; reverse recovery current 3.3 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package DPAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 600 V VGS = 0 V, ID = 1 mA 4
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 600 V 4
Zero gate voltage drain current (TC = 125 °C) IDSS 50 µA VGS = 0 V, VDS = 600 V, TC = 125 °C (1) 4
Gate body leakage current IGSS -100 100 nA VDS=0 V, VGS= ±30 V 4
Gate threshold voltage VGS(th) 2.25 3 3.7 V VDS = VGS, ID = 250 µA 4
Static drain-source on-resistance RDS(on) 7.3 8.5 Ω VGS = 10 V, ID = 0.5 A 4
Source-drain current (continuous) ISD 1 A 5
Source-drain current (pulsed) ISDM 4 A 5
Forward on voltage VSD 1.6 V ISD = 1.0 A, VGS = 0 V 5
Drain-source voltage VDS 600 V 3
Drain-gate voltage VDGR 600 V RGS = 20 kΩ 3
Gate-source voltage VGS -30 30 V 3
Drain current (continuous) ID 1 A TC = 25 °C 3
Drain current (continuous) ID 0.63 A TC = 100 °C 3
Drain current (pulsed) IDM 4 A 3
Total dissipation PTOT 30 W TC = 25 °C 3
Avalanche current, repetitive or not-repetitive IAR 1 A pulse width limited by Tjmax 3
Single pulse avalanche energy EAS 25 mJ starting Tj = 25 °C, ID = IAR, VDD = 50 V 3
Peak diode recovery voltage slope dv/dt 3 V/ns ISD ≤ 1.0 A, di/dt ≤ 100 A/µs; VDD ≤ V(BR)DSS, TJ ≤ TJMAX 3
Operating junction temperature range Tj -55 150 °C 3
Thermal resistance junction-case Rthj-case 4.2 °C/W 3
Thermal resistance junction-ambient Rthj-amb 100 °C/W 3

CAD (KiCad official)

  • Symbol: STD1NK60T4
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: std1nk60t4-etched.step / std1nk60t4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); std1nk60t4.step / std1nk60t4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (19 pp, sha256 5fa21f83526f2245, retrieved 2026-09-24, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF