component
STD1NK60T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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std1nk60t4: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+300
README.md+29@@ -21,6 +21,35 @@ STD1NK60T4 from STMicroelectronics, in a DPAK. Pinout and pin descriptions extra | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source breakdown voltage | V(BR)DSS | 600 | | | V | VGS = 0 V, ID = 1 mA | 4 |+| Zero gate voltage drain current | IDSS | | | 1 | µA | VGS = 0 V, VDS = 600 V | 4 |+| Zero gate voltage drain current (TC = 125 °C) | IDSS | | | 50 | µA | VGS = 0 V, VDS = 600 V, TC = 125 °C (1) | 4 |+| Gate body leakage current | IGSS | -100 | | 100 | nA | VDS=0 V, VGS= ±30 V | 4 |+| Gate threshold voltage | VGS(th) | 2.25 | 3 | 3.7 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on-resistance | RDS(on) | | 7.3 | 8.5 | Ω | VGS = 10 V, ID = 0.5 A | 4 |+| Source-drain current (continuous) | ISD | | | 1 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 4 | A | | 5 |+| Forward on voltage | VSD | | | 1.6 | V | ISD = 1.0 A, VGS = 0 V | 5 |+| Drain-source voltage | VDS | | | 600 | V | | 3 |+| Drain-gate voltage | VDGR | | | 600 | V | RGS = 20 kΩ | 3 |+| Gate-source voltage | VGS | -30 | | 30 | V | | 3 |+| Drain current (continuous) | ID | | | 1 | A | TC = 25 °C | 3 |+| Drain current (continuous) | ID | | | 0.63 | A | TC = 100 °C | 3 |+| Drain current (pulsed) | IDM | | | 4 | A | | 3 |+| Total dissipation | PTOT | | | 30 | W | TC = 25 °C | 3 |+| Avalanche current, repetitive or not-repetitive | IAR | | | 1 | A | pulse width limited by Tjmax | 3 |+| Single pulse avalanche energy | EAS | | | 25 | mJ | starting Tj = 25 °C, ID = IAR, VDD = 50 V | 3 |+| Peak diode recovery voltage slope | dv/dt | | | 3 | V/ns | ISD ≤ 1.0 A, di/dt ≤ 100 A/µs; VDD ≤ V(BR)DSS, TJ ≤ TJMAX | 3 |+| Operating junction temperature range | Tj | -55 | | 150 | °C | | 3 |+| Thermal resistance junction-case | Rthj-case | | | 4.2 | °C/W | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 100 | °C/W | | 3 |+ ## CAD (KiCad official) - Symbol: `STD1NK60T4`
page.json+271@@ -135,6 +135,277 @@ "Package": "DPAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5fa21f83526f2245",+ "rows": [+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 600,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = 1 mA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0 V, VDS = 600 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current (TC = 125 °C)",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VGS = 0 V, VDS = 600 V, TC = 125 °C (1)",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS=0 V, VGS= ±30 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2.25,+ "typ": 3,+ "max": 3.7,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 7.3,+ "max": 8.5,+ "conditions": "VGS = 10 V, ID = 0.5 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (continuous)",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.6,+ "conditions": "ISD = 1.0 A, VGS = 0 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-gate voltage",+ "symbol": "VDGR",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 600,+ "conditions": "RGS = 20 kΩ",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 0.63,+ "conditions": "TC = 100 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 4,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Avalanche current, repetitive or not-repetitive",+ "symbol": "IAR",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "pulse width limited by Tjmax",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 25,+ "conditions": "starting Tj = 25 °C, ID = IAR, VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 3,+ "conditions": "ISD ≤ 1.0 A, di/dt ≤ 100 A/µs; VDD ≤ V(BR)DSS, TJ ≤ TJMAX",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature range",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 4.2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],