# STB80NF10T4

**STMicroelectronics** · MOSFETs · D2PAK

STB80NF10T4 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal with ±20 V maximum gate-source voltage rating and 2-4 V gate threshold voltage |
| 2 | Drain | passive | Drain terminal rated for 80 A continuous drain current at 25 °C and 100 °C and maximum 100 V drain-source voltage |
| 3 | Source | passive | Source return terminal with integrated body diode having 1.3 V forward on-voltage at 80 A source-drain current |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage (VGS = 0) | VDS |  |  | 100 | V | VGS = 0 | 3 |
| Gate-source voltage | VGS | -20 |  | 20 | V |  | 3 |
| Drain current (continuous) | ID |  |  | 80 | A | TC = 25 °C; limited by package | 3 |
| Drain current (pulsed) | IDM |  |  | 320 | A | Pulse width limited by safe operating area | 3 |
| Total dissipation | PTOT |  |  | 300 | W | TC = 25 °C | 3 |
| Derating factor |  |  |  | 2 | W/°C |  | 3 |
| Peak diode recovery voltage slope | dv/dt |  |  | 7 | V/ns | ISD < 80 A, di/dt < 300 A/µs, VDD = 80% V(BR)DSS | 3 |
| Single pulse avalanche energy | EAS |  |  | 350 | mJ | Starting Tj = 25 °C, ID = 40 A, VDD = 50 V | 3 |
| Storage temperature | Tstg | -55 |  | 175 | °C | Shared value with Tj as printed: -55 to 175 | 3 |
| Operating junction temperature | Tj | -55 |  | 175 | °C | Shared value with Tstg as printed: -55 to 175 | 3 |
| Thermal resistance junction-case | Rthj-case |  |  | 0.5 | °C/W |  | 3 |
| Thermal resistance junction-ambient | Rthj-amb |  |  | 62.5 | °C/W |  | 3 |
| Maximum lead temperature for soldering | Tl |  |  | 300 | °C | For soldering purpose | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | ID = 250 µA, VGS = 0 | 4 |
| Zero gate voltage drain current | IDSS |  |  | 500 | nA | VDS = Max rating | 4 |
| Zero gate voltage drain current | IDSS |  |  | 10 | µA | VDS = Max rating @125 °C | 4 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VDS = 0, VGS = ±20 V | 4 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |
| Static drain-source on resistance | RDS(on) |  | 0.012 | 0.015 | Ω | VGS = 10 V, ID = 40 A | 4 |
| Total gate charge | Qg |  | 135 | 182 | nC | VDD = 50 V, ID = 80 A, VGS = 10 V | 4 |
| Source-drain current | ISD |  |  | 80 | A |  | 5 |
| Source-drain current (pulsed) | ISDM |  |  | 320 | A | Pulse width limited by safe operating area | 5 |
| Forward on voltage | VSD |  |  | 1.3 | V | ISD = 80 A, VGS = 0; pulse duration = 300 µs, duty cycle 1.5% | 5 |

## CAD (KiCad official)

- Symbol: `STB80NF10T4`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files: `stb80nf10t4-etched.step` / `stb80nf10t4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stb80nf10t4.step` / `stb80nf10t4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885415697002496) (14 pp, sha256 `d005f383bd70a5eb`, retrieved 2026-09-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stb80nf10t4-datasheet.pdf)