component
STB80NF10T4
Public Made by Adomby adom
STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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stb80nf10t4: specified limits as data (metadata.characteristics, 23 rows from the datasheet)
2 files changed
+313
README.md+30@@ -21,6 +21,36 @@ STB80NF10T4 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions ext | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage (VGS = 0) | VDS | | | 100 | V | VGS = 0 | 3 |+| Gate-source voltage | VGS | -20 | | 20 | V | | 3 |+| Drain current (continuous) | ID | | | 80 | A | TC = 25 °C; limited by package | 3 |+| Drain current (pulsed) | IDM | | | 320 | A | Pulse width limited by safe operating area | 3 |+| Total dissipation | PTOT | | | 300 | W | TC = 25 °C | 3 |+| Derating factor | | | | 2 | W/°C | | 3 |+| Peak diode recovery voltage slope | dv/dt | | | 7 | V/ns | ISD < 80 A, di/dt < 300 A/µs, VDD = 80% V(BR)DSS | 3 |+| Single pulse avalanche energy | EAS | | | 350 | mJ | Starting Tj = 25 °C, ID = 40 A, VDD = 50 V | 3 |+| Storage temperature | Tstg | -55 | | 175 | °C | Shared value with Tj as printed: -55 to 175 | 3 |+| Operating junction temperature | Tj | -55 | | 175 | °C | Shared value with Tstg as printed: -55 to 175 | 3 |+| Thermal resistance junction-case | Rthj-case | | | 0.5 | °C/W | | 3 |+| Thermal resistance junction-ambient | Rthj-amb | | | 62.5 | °C/W | | 3 |+| Maximum lead temperature for soldering | Tl | | | 300 | °C | For soldering purpose | 3 |+| Drain-source breakdown voltage | V(BR)DSS | 100 | | | V | ID = 250 µA, VGS = 0 | 4 |+| Zero gate voltage drain current | IDSS | | | 500 | nA | VDS = Max rating | 4 |+| Zero gate voltage drain current | IDSS | | | 10 | µA | VDS = Max rating @125 °C | 4 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VDS = 0, VGS = ±20 V | 4 |+| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS = VGS, ID = 250 µA | 4 |+| Static drain-source on resistance | RDS(on) | | 0.012 | 0.015 | Ω | VGS = 10 V, ID = 40 A | 4 |+| Total gate charge | Qg | | 135 | 182 | nC | VDD = 50 V, ID = 80 A, VGS = 10 V | 4 |+| Source-drain current | ISD | | | 80 | A | | 5 |+| Source-drain current (pulsed) | ISDM | | | 320 | A | Pulse width limited by safe operating area | 5 |+| Forward on voltage | VSD | | | 1.3 | V | ISD = 80 A, VGS = 0; pulse duration = 300 µs, duty cycle 1.5% | 5 |+ ## CAD (KiCad official) - Symbol: `STB80NF10T4`
page.json+283@@ -135,6 +135,289 @@ "Package": "D2PAK", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "d005f383bd70a5eb",+ "rows": [+ {+ "name": "Drain-source voltage (VGS = 0)",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 0",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (continuous)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "TC = 25 °C; limited by package",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain current (pulsed)",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total dissipation",+ "symbol": "PTOT",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "TC = 25 °C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Derating factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 2,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Peak diode recovery voltage slope",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 7,+ "conditions": "ISD < 80 A, di/dt < 300 A/µs, VDD = 80% V(BR)DSS",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Single pulse avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 350,+ "conditions": "Starting Tj = 25 °C, ID = 40 A, VDD = 50 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "Shared value with Tj as printed: -55 to 175",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "Shared value with Tstg as printed: -55 to 175",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-case",+ "symbol": "Rthj-case",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rthj-amb",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum lead temperature for soldering",+ "symbol": "Tl",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "For soldering purpose",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "ID = 250 µA, VGS = 0",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 500,+ "conditions": "VDS = Max rating",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "VDS = Max rating @125 °C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0, VGS = ±20 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 3,+ "max": 4,+ "conditions": "VDS = VGS, ID = 250 µA",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.012,+ "max": 0.015,+ "conditions": "VGS = 10 V, ID = 40 A",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 135,+ "max": 182,+ "conditions": "VDD = 50 V, ID = 80 A, VGS = 10 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Source-drain current (pulsed)",+ "symbol": "ISDM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 320,+ "conditions": "Pulse width limited by safe operating area",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Forward on voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "ISD = 80 A, VGS = 0; pulse duration = 300 µs, duty cycle 1.5%",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],