# STB6N80K5

**STMicroelectronics** · MOSFETs · D2PAK

STB6N80K5 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the MDmesh K5 MOSFET; the gate-source voltage is limited to ±30 V absolute maximum, and the part is Zener-protected at the gate. |
| 2 | D | passive | Drain of the MOSFET, internally connected to the TAB; rated 800 V drain-source breakdown (V(BR)DSS min.) and 4.5 A continuous drain current at TC = 25 °C. |
| 3 | S | passive | Source of the MOSFET; the source-drain body diode is rated 4.5 A continuous and has a forward on voltage of 1.5 V typical at ISD = 4.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | STMicroelectronics |
| Package | D2PAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## CAD (KiCad official)

- Symbol: `STB6N80K5`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: D2PAK (KiCad packages3D, STEP)
- 3D model files: `stb6n80k5-etched.step` / `stb6n80k5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stb6n80k5.step` / `stb6n80k5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stb6n80k5.pdf) (15 pp, sha256 `3a8b1f4c16594fd3`, retrieved 2026-10-08, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/stb6n80k5-datasheet.pdf)