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Initial commit: component/stb6n80k5

Ray ·140f31c521 ·1d ago
2 files changed +209
README.mdadded+39
@@ -0,0 +1,39 @@+# STB6N80K5++**STMicroelectronics** · MOSFETs · D2PAK++STB6N80K5 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.++## Pinout++| Pin | Name | Type | Function |+|---|---|---|---|+| 1 | G | input | Gate of the MDmesh K5 MOSFET; the gate-source voltage is limited to ±30 V absolute maximum, and the part is Zener-protected at the gate. |+| 2 | D | passive | Drain of the MOSFET, internally connected to the TAB; rated 800 V drain-source breakdown (V(BR)DSS min.) and 4.5 A continuous drain current at TC = 25 °C. |+| 3 | S | passive | Source of the MOSFET; the source-drain body diode is rated 4.5 A continuous and has a forward on voltage of 1.5 V typical at ISD = 4.5 A. |++## Key specifications++| Parameter | Value |+|---|---|+| Manufacturer | STMicroelectronics |+| Package | D2PAK |+| Category | Transistors/Thyristors |+| Pins | 3 |++## CAD (KiCad official)++- Symbol: `STB6N80K5`+- Footprint: `Package_TO_SOT_SMD:TO-263-2`+- 3D model: D2PAK (KiCad packages3D, STEP)+- 3D model files: `stb6n80k5-etched.step` / `stb6n80k5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `stb6n80k5.step` / `stb6n80k5.glb` are the bare package body.++## Provenance++Data extracted from the manufacturer datasheet, not a distributor listing:++- **Datasheet:** [STMicroelectronics datasheet](https://www.st.com/resource/en/datasheet/stb6n80k5.pdf) (15 pp, sha256 `3a8b1f4c16594fd3`, retrieved 2026-10-08, tier: manufacturer)+- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.+- **CAD:** KiCad official libraries (CC-BY-SA 4.0).++[Datasheet PDF](docs/stb6n80k5-datasheet.pdf)
page.jsonadded+170
@@ -0,0 +1,170 @@+{+  "slug": "stb6n80k5",+  "version": "0.1.0",+  "type": "component",+  "description": "STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",+  "tags": [+    "component",+    "transistors-thyristors",+    "stb6n80k5",+    "factory-2.0.0",+    "extractor-text"+  ],+  "dependencies": {},+  "hero": {+    "type": "image",+    "path": "docs/hero.png"+  },+  "files": [+    "page.json",+    "README.md",+    "stb6n80k5.kicad_sym",+    "stb6n80k5.kicad_mod",+    "stb6n80k5.glb",+    "stb6n80k5.step",+    "stb6n80k5.lbr",+    "docs/hero.png",+    "docs/stb6n80k5-datasheet.pdf",+    "viewers/symbol.html",+    "viewers/footprint.html",+    "stb6n80k5-hero.glb",+    "stb6n80k5-hero.overlay.json"+  ],+  "component": {+    "mpn": "STB6N80K5",+    "manufacturer": "STMicroelectronics",+    "package": "D2PAK",+    "pin_count": 3,+    "category": "Transistors/Thyristors",+    "subcategory": "MOSFETs",+    "datasheet": "https://www.st.com/resource/en/datasheet/stb6n80k5.pdf",+    "parts": {+      "symbol": "stb6n80k5.kicad_sym",+      "footprint": "stb6n80k5.kicad_mod",+      "model_3d": "stb6n80k5-hero.glb",+      "model_3d_plain": "stb6n80k5.glb",+      "model_3d_step": "stb6n80k5-etched.step",+      "model_3d_step_plain": "stb6n80k5.step",+      "lbr": "stb6n80k5.lbr"+    },+    "distributor_links": {+      "lcsc": "C2969906",+      "digikey": "497-14974-2-ND",+      "mouser": "511-STB6N80K5"+    },+    "distributor_check": {+      "checked_at": "2026-10-08T18:01:59Z",+      "source": "Component Ocean /api/assign-pns",+      "digikey": {+        "pn": "497-14974-2-ND",+        "status": "found",+        "lifecycle": "Active"+      },+      "mouser": {+        "pn": "511-STB6N80K5",+        "status": "found"+      }+    },+    "pins": [+      {+        "number": "1",+        "name": "G",+        "type": "input",+        "description": "Gate of the MDmesh K5 MOSFET; the gate-source voltage is limited to ±30 V absolute maximum, and the part is Zener-protected at the gate."+      },+      {+        "number": "2",+        "name": "D",+        "type": "passive",+        "description": "Drain of the MOSFET, internally connected to the TAB; rated 800 V drain-source breakdown (V(BR)DSS min.) and 4.5 A continuous drain current at TC = 25 °C."+      },+      {+        "number": "3",+        "name": "S",+        "type": "passive",+        "description": "Source of the MOSFET; the source-drain body diode is rated 4.5 A continuous and has a forward on voltage of 1.5 V typical at ISD = 4.5 A."+      }+    ],+    "provenance": {+      "extractor": "extract_pins 0.3",+      "factory_chain": {+        "factory": "2.0.0",+        "extractor": "extract_pins 0.3",+        "primary_model": "claude-haiku-5-5",+        "primary_mode": "text",+        "consensus_model": "claude-sonnet-5-5",+        "consensus": "agreed",+        "guards": "pin_guards 0.1: passed",+        "guard_notes": [+          "extractor flagged: The datasheet labels the drain as D(2, TAB): the metal tab is internally connected to pin 2 and is n; Pin assignments come from the device symbol and pin labels on page 1 (G(1), D(2, TAB), S(3)); the da; The schema has no spec field, so the headline ratings were placed only in the pin descriptions. The "+        ],+        "pages_sent": 15,+        "cost_usd": 0.0427,+        "at": "2026-10-08T18:01:29"+      },+      "datasheet": {+        "url": "https://www.st.com/resource/en/datasheet/stb6n80k5.pdf",+        "pages": 15,+        "sha256": "3a8b1f4c16594fd3",+        "source_tier": "mfr"+      },+      "cad": "KiCad official (CC-BY-SA 4.0)",+      "pins": {+        "total": 3,+        "described": 3,+        "cites_pages": true,+        "refuses_to_fabricate": true+      }+    },+    "viewers": {+      "symbol": "viewers/symbol.html",+      "footprint": "viewers/footprint.html"+    },+    "models_3d": [+      {+        "file": "stb6n80k5.step",+        "role": "plain",+        "up": "Z",+        "units": "mm",+        "origin": "footprint origin = pad-pattern centre",+        "seat": "z = 0",+        "extents_mm": [+          15,+          10,+          4.42+        ],+        "zmin_mm": 0,+        "centre_offset_mm": 0,+        "footprint_binding": "identity",+        "sha256": "804a3f76e4182a02567b2429bdc9a585b857158fb8543fccd29c8eb6780e1310",+        "checked": "2026-10-08",+        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+      },+      {+        "file": "stb6n80k5-etched.step",+        "role": "eda",+        "up": "Z",+        "units": "mm",+        "origin": "footprint origin = pad-pattern centre",+        "seat": "z = 0",+        "extents_mm": [+          15,+          10,+          4.42+        ],+        "zmin_mm": 0,+        "centre_offset_mm": 0,+        "footprint_binding": "identity",+        "sha256": "c397a9411c5f0b8611ac41adf3a1d8f70ab8f134fd5cc4f4077d8aa2140304c9",+        "checked": "2026-10-08",+        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"+      }+    ]+  },+  "visibility": "public",+  "org": "adom",+  "author": {+    "name": "Ray",+    "email": "[email protected]"+  }+}\ No newline at end of file