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STB6N80K5

STMicroelectronics · MOSFETs · D2PAK

STB6N80K5 from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the MDmesh K5 MOSFET; the gate-source voltage is limited to ±30 V absolute maximum, and the part is Zener-protected at the gate.
2 D passive Drain of the MOSFET, internally connected to the TAB; rated 800 V drain-source breakdown (V(BR)DSS min.) and 4.5 A continuous drain current at TC = 25 °C.
3 S passive Source of the MOSFET; the source-drain body diode is rated 4.5 A continuous and has a forward on voltage of 1.5 V typical at ISD = 4.5 A.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: STB6N80K5
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stb6n80k5-etched.step / stb6n80k5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb6n80k5.step / stb6n80k5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (15 pp, sha256 3a8b1f4c16594fd3, retrieved 2026-10-08, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF