STB14NM50N

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  "title": "STB14NM50N",
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    "subcategory": "MOSFETs",
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      "digikey": "497-10644-2-ND",
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      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±25 V (Table 1, page 2)."
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      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal, electrically connected to the tab; drain-source voltage is rated at 500 V and continuous drain current at TC = 25 °C is 12 A (Table 1, page 2)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal, the reference for VGS; the source-drain diode is rated at 12 A continuous and 48 A pulsed (Table 7, page 4)."
      }
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  "metadata": {
    "specs": {
      "Manufacturer": "STMicroelectronics",
      "Package": "D2PAK",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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          "name": "Drain-source voltage",
          "symbol": "VDS",
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          "unit": "V",
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          "typ": null,
          "max": 500,
          "conditions": "",
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        {
          "name": "Gate-source voltage",
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        {
          "name": "Drain current (continuous)",
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          "unit": "A",
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          "conditions": "TC = 25 °C",
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          "name": "Drain current (continuous)",
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          "unit": "A",
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          "conditions": "TC = 100 °C",
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        {
          "name": "Drain current (pulsed)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "max": 48,
          "conditions": "Pulse width limited by safe operating area",
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        {
          "name": "Total power dissipation",
          "symbol": "PTOT",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
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          "max": 90,
          "conditions": "TC = 25 °C",
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        {
          "name": "Peak diode recovery voltage slope",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
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          "max": 15,
          "conditions": "ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS",
          "source_page": 2,
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        },
        {
          "name": "Operating junction temperature range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
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        {
          "name": "Thermal resistance, junction-to-case",
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        {
          "name": "Thermal resistance, junction-to-ambient",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
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          "max": 30,
          "conditions": "When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper",
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        },
        {
          "name": "Avalanche current, repetitive or not-repetitive",
          "symbol": "IAR",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
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          "max": 4,
          "conditions": "Pulse width limited by TJ max.",
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        {
          "name": "Single pulse avalanche energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
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          "typ": null,
          "max": 172,
          "conditions": "Starting TJ = 25 °C, ID = IAR, VDD = 50 V",
          "source_page": 2,
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        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 500,
          "typ": null,
          "max": null,
          "conditions": "ID = 1 mA, VGS = 0 V",
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        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "µA",
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          "conditions": "VGS = 0 V, VDS = 500 V",
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        {
          "name": "Zero gate voltage drain current (TC = 125 °C)",
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          "unit": "µA",
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          "max": 100,
          "conditions": "VGS = 0 V, VDS = 500 V, TC = 125 °C (specified by design, not tested in production)",
          "source_page": 3,
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        },
        {
          "name": "Gate body leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0 V, VGS = ±20 V",
          "source_page": 3,
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        {
          "name": "Gate threshold voltage",
          "symbol": "VGS(th)",
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          "max": 4,
          "conditions": "VDS = VGS, ID = 250 µA",
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        },
        {
          "name": "Static drain-source on-resistance",
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          "conditions": "VGS = 10 V, ID = 6 A",
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          "name": "Source-drain current",
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        {
          "name": "Source-drain current (pulsed)",
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          "name": "Forward on voltage",
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          "kind": "electrical",
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          "typ": null,
          "max": 1.6,
          "conditions": "ISD = 12 A, VGS = 0 V",
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