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STB14NM50N

Public Made by Adom

by adom

STMicroelectronics MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsstb14nm50nfactory-2.0.0extractor-text
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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
viewers stb14nm50n: viewers · Ray 24d ago
package.json stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
page.json stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
README.md stb14nm50n: specified limits as data (metadata.characteristics, 21 rows from the datasheet) · Ray 18d ago
stb14nm50n-etched.glb stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb14nm50n-etched.step stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb14nm50n-hero.glb stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb14nm50n-hero.overlay.json stb14nm50n: etch along the lead row, tab up; full MPN text (service-occt 1.9.3) (service-occt 1.6.0, from the plain STE… · Ray 17d ago
stb14nm50n.glb Publish 0.1.0 · Ray 24d ago
stb14nm50n.kicad_mod Publish 0.1.0 · Ray 24d ago
stb14nm50n.kicad_sym Publish 0.1.0 · Ray 24d ago
stb14nm50n.lbr Publish 0.1.0 · Ray 24d ago
stb14nm50n.step Publish 0.1.0 · Ray 24d ago

STB14NM50N

STMicroelectronics · MOSFETs · D2PAK

STB14NM50N from STMicroelectronics, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET; gate-source voltage is rated at ±25 V (Table 1, page 2).
2 D passive Drain terminal, electrically connected to the tab; drain-source voltage is rated at 500 V and continuous drain current at TC = 25 °C is 12 A (Table 1, page 2).
3 S passive Source terminal, the reference for VGS; the source-drain diode is rated at 12 A continuous and 48 A pulsed (Table 7, page 4).

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package D2PAK
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 500 V 2
Gate-source voltage VGS -25 25 V 2
Drain current (continuous) ID 12 A TC = 25 °C 2
Drain current (continuous) ID 8 A TC = 100 °C 2
Drain current (pulsed) IDM 48 A Pulse width limited by safe operating area 2
Total power dissipation PTOT 90 W TC = 25 °C 2
Peak diode recovery voltage slope dv/dt 15 V/ns ISD ≤ 12 A, di/dt ≤ 400 A/μs, VDS (peak) ≤ V(BR)DSS, VDD = 80% V(BR)DSS 2
Operating junction temperature range TJ -55 150 °C 2
Thermal resistance, junction-to-case RthJC 1.39 °C/W 2
Thermal resistance, junction-to-ambient RthJA 30 °C/W When mounted on a standard 1 inch² area of FR-4 PCB with 2-oz copper 2
Avalanche current, repetitive or not-repetitive IAR 4 A Pulse width limited by TJ max. 2
Single pulse avalanche energy EAS 172 mJ Starting TJ = 25 °C, ID = IAR, VDD = 50 V 2
Drain-source breakdown voltage V(BR)DSS 500 V ID = 1 mA, VGS = 0 V 3
Zero gate voltage drain current IDSS 1 µA VGS = 0 V, VDS = 500 V 3
Zero gate voltage drain current (TC = 125 °C) IDSS 100 µA VGS = 0 V, VDS = 500 V, TC = 125 °C (specified by design, not tested in production) 3
Gate body leakage current IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 3
Gate threshold voltage VGS(th) 2 3 4 V VDS = VGS, ID = 250 µA 3
Static drain-source on-resistance RDS(on) 285 320 mΩ VGS = 10 V, ID = 6 A 3
Source-drain current ISD 12 A 4
Source-drain current (pulsed) ISDM 48 A Pulse width limited by safe operating area 4
Forward on voltage VSD 1.6 V ISD = 12 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: STB14NM50N
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: stb14nm50n-etched.step / stb14nm50n-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); stb14nm50n.step / stb14nm50n.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (13 pp, sha256 afbae22f7b63e4e7, retrieved 2026-10-09, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF